| Description | Model No. | Sensitive size | Dark Current | Package | Applications | |
|---|---|---|---|---|---|---|
| Typ. | ||||||
| high speed | KPDEH16C | 16µmφ | 0.5nA@2V | Chip Material | 25Gpbs receivers | |
| high speed | KPDEH16DC | 16µmφ | 0.5nA@2V | |||
| high speed | KPDEH16DLC | 40µmφ | 0.5nA@2V | |||
| high speed | KPDE10GC-V2 | 28µmφ | 10pA@5V | 10Gbps receivers | ||
| high speed | KPDE10GC-V3 | 45µmφ | 10pA@5V | flip chip type chip on carrier | 100Gbps receivers Efficient coupling with a single mode fiber | |
| high speed | KPDE004 | 45µmφ | 20pA@5V | hermetically sealed pig tail | DC-3Gbps receivers | |
| high speed | KPDE006 | 60µmφ | 30pA@2V | DC-2.5Gbps receivers | ||
| high speed | KPDE008 | 80µmφ | 30pA@5V | DC-1.25Gbps receivers | ||
| high speed | KPDE020 | 200µmφ | 50pA@5V | DC-1GHz power monitor | ||
| high speed | KPDE030 | 300µmφ | 100pA@5V | DC-600MHz power monitor | ||
| large area | KPDE086S | 0.86 x 0.86 (mm) | 1nA@5V | hermetically sealed | Near InfraRed(NIR) sensors, LD & LED power monitors, Near InfraRed(NIR) spectroscopy, LD & LED aging equipments, Power meters | |
| large area | KPDE150 | 1500µmφ | 1µA@1V | |||
| large area | KPDE300 | 3000µmφ | 1µA@1V | |||
| mini Can | KPDE008-S | 80µmφ | 30pA@5V | Mini can, Pigtail | For high-density packaging of multiple photodiode channels | |
| mini Can | KPDE020-S | 200µmφ | 50pA@5V | |||
| mini Can | KPDE030-S | 300µmφ | 100pA@5V | |||
| mini pig tail | KPDE008S-TU | 80µmφ | 30pA@5V | Mini Can pig tail | ||
| mini pig tail | KPDE030SA-TU | 300µmφ | 160pA@5V | |||
| analog | KPDE004A | 45µmφ | 10pA@5V | hermetically sealed pig tail | 1-3Gbps analog receivers | |
| analog | KPDE008A | 80µmφ | 15pA@5V | 1-1.25Gbps analog receivers | ||
| L band | KPDE030SL | 300µmφ | 100pA@5V | hermetically sealed | Optical output monitor for DWDM | |
| edge illuminated | KPEI2GC | 75x35 (µm) | 20pA@5V | Chip Material | Sensitive area located on chip ege facet, Integrating surface hybrid on V-groove and PLC(Planar light-wave Circuit) platform | |
| edge illuminated | KPEIMC-100 | 80x100 (µm) | 35pA@5V | Active area on chip edge facet enlarged for efficient coupling of optical interconnection | ||
| edge illuminated | KPEIMC-UDCOM | 100x120 (µm) | 50pA@5V | photodiode with a large aperture laser back light power monitor | ||
| array | KPDE005HA1 | 50µmφ | 30pA@5V | 100Gbps array Optical fiber butt-joint with 250µm pitch | ||
| array | KPDE005HA2 | 50µmφ | 30pA@5V | |||
| array | KPDE005HA4 | 50µmφ | 30pA@5V | |||
| array | KPDE005HA8 | 50µmφ | 30pA@5V | |||
| array | KPDE005HA12 | 50µmφ | 30pA@5V | |||
| array | KPA8-2N | 80µmφ | 80pA@5V | 8ch array with 250µm pitch | Optical fiber butt-joint with 250µm pitch | |
| array | KPA4-2N | 80µmφ | 80pA@5V | 4ch array with 250µm pitch |





