InGaAs Photodiodes

KPDE005HA8

Features

Surface illuminated type
Large active diameter (50µmφ)
Low dark current

Applications

Optical interconnection
10G Ethernet/Fibre channel

Specifications

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit	Conditions
Reverse voltage	V_R	15	V
Reverse Current	I_R	10	mA
Forward current	I_F	5	mA
Operating temperature	T_opr	-40 to +85	℃	To avoid a dew condensation
Storage temperature	T_stg	-40 to +85	℃	To avoid a dew condensation

Electrical and Optical characteristics

Parameter	Symbol	Value			Unit	Conditions
Parameter	Symbol	Min.	Typ.	Max	Unit	Conditions
Sensitive size	D		50		µmφ
Bandwidth	BW	7.0	8.0		GHz	λ=1550nm, P_i=0dBm, V_R=5V, small signal modulation
Responsivity	R	0.75	0.8		A/W	V_R=5V, λ=1550nm
Dark current	I_D		30	200	pA	V_R=5V
Chip capacitance	C_chip		0.2	0.3	pF	V_R=5V, f=1MHz

InGaAs Photodiodes : other products

Description	Model No.	Sensitive size	Dark Current	Package	Applications
Description	Model No.	Sensitive size	Typ.	Package	Applications
high speed	KPDEH16C	16µmφ	0.5nA@2V	Chip Material	25Gpbs receivers
high speed	KPDEH16DC	16µmφ	0.5nA@2V
high speed	KPDEH16DLC	40µmφ	0.5nA@2V
high speed	KPDE10GC-V2	28µmφ	10pA@5V		10Gbps receivers
high speed	KPDE10GC-V3	45µmφ	10pA@5V	flip chip type chip on carrier	100Gbps receivers Efficient coupling with a single mode fiber
high speed	KPDE004	45µmφ	20pA@5V	hermetically sealed pig tail	DC-3Gbps receivers
high speed	KPDE006	60µmφ	30pA@2V		DC-2.5Gbps receivers
high speed	KPDE008	80µmφ	30pA@5V		DC-1.25Gbps receivers
high speed	KPDE020	200µmφ	50pA@5V		DC-1GHz power monitor
high speed	KPDE030	300µmφ	100pA@5V		DC-600MHz power monitor
large area	KPDE086S	0.86 x 0.86 (mm)	1nA@5V	hermetically sealed	Near InfraRed(NIR) sensors, LD & LED power monitors, Near InfraRed(NIR) spectroscopy, LD & LED aging equipments, Power meters
large area	KPDE150	1500µmφ	1µA@1V
large area	KPDE300	3000µmφ	1µA@1V
mini Can	KPDE008-S	80µmφ	30pA@5V	Mini can, Pigtail	For high-density packaging of multiple photodiode channels
mini Can	KPDE020-S	200µmφ	50pA@5V
mini Can	KPDE030-S	300µmφ	100pA@5V
mini pig tail	KPDE008S-TU	80µmφ	30pA@5V	Mini Can pig tail
mini pig tail	KPDE030SA-TU	300µmφ	160pA@5V	Mini Can pig tail
analog	KPDE004A	45µmφ	10pA@5V	hermetically sealed pig tail	1-3Gbps analog receivers
analog	KPDE008A	80µmφ	15pA@5V	hermetically sealed pig tail	1-1.25Gbps analog receivers
L band	KPDE030SL	300µmφ	100pA@5V	hermetically sealed	Optical output monitor for DWDM
edge illuminated	KPEI2GC	75x35 (µm)	20pA@5V	Chip Material	Sensitive area located on chip ege facet, Integrating surface hybrid on V-groove and PLC(Planar light-wave Circuit) platform
edge illuminated	KPEIMC-100	80x100 (µm)	35pA@5V		Active area on chip edge facet enlarged for efficient coupling of optical interconnection
edge illuminated	KPEIMC-UDCOM	100x120 (µm)	50pA@5V		photodiode with a large aperture laser back light power monitor
array	KPDE005HA1	50µmφ	30pA@5V		100Gbps array Optical fiber butt-joint with 250µｍ pitch
array	KPDE005HA2	50µmφ	30pA@5V
array	KPDE005HA4	50µmφ	30pA@5V
array	KPDE005HA8	50µmφ	30pA@5V
array	KPDE005HA12	50µmφ	30pA@5V
array	KPA8-2N	80µmφ	80pA@5V	8ch array with 250µm pitch	Optical fiber butt-joint with 250µm pitch
array	KPA4-2N	80µmφ	80pA@5V	4ch array with 250µm pitch	Optical fiber butt-joint with 250µm pitch

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