InGaAs Photodiodes
-
KPDE10GC-V3
Features
- Back surface illuminated type
- Large active area (φ45µm)
- Low dark current
- High reliability
- Chip-on-carrier type is available
Applications
- Digital and analog optical communication
- Optical LAN
- OTDR
Specifications
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Reverse voltage | VR | 10 | V | |
| Maximum optical power input | Pimax | 5 | mW | |
| Forward current | IF | 10 | mA | |
| Operating temperature | Topr | -40 to +85 | ℃ | To avoid a dew condensation |
| Storage temperature | Tstg | -40 to +85 | ℃ | To avoid a dew condensation |
Electrical and Optical characteristics
| Parameter | Symbol | Value | Unit | Conditions | ||
|---|---|---|---|---|---|---|
| Min. | Typ. | Max | ||||
| Active diameter | D | 45 | µmφ | |||
| Bandwidth | BW | 10 | 14 | GHz | Pi=-10dBm, VR=5V, small signal modulation | |
| Responsivity | R | 0.80 0.85 | 0.88 0.98 | A/W | λ=1310nm, VR=5V λ=1550nm, VR=5V | |
| Dark current | ID | 10 | 200 | pA | VR=5V | |
| Chip capacitance | Cchip | 0.17 | 0.35 | pF | VR=5V, f=1MHz | |
InGaAs Photodiodes : other products
| Description | Model No. | Sensitive area | Dark Current | Package | Applications | |
|---|---|---|---|---|---|---|
| Typ. | ||||||
 | high speed | KPDEH16C | 16µmφ | 0.5nA@2V | Chip Material | 25Gpbs receivers |
| high speed | KPDEH16DC | 16µmφ | 0.5nA@2V | ||
| high speed | KPDEH16DLC | 40µmφ | 0.5nA@2V | ||
| high speed | KPDE10GC-V2 | 28µmφ | 10pA@5V | 10Gbps receivers | |
| high speed | KPDE10GC-V3 | 45µmφ | 10pA@5V | flip chip type chip on carrier | 100Gbps receivers Efficient coupling with a single mode fiber |
 | high speed | KPDE004 | 45µmφ | 20pA@5V | hermetically sealed pig tail | DC-3Gbps receivers |
 | high speed | KPDE006 | 60µmφ | 30pA@2V | DC-2.5Gbps receivers | |
 | high speed | KPDE008 | 80µmφ | 30pA@5V | DC-1.25Gbps receivers | |
 | high speed | KPDE020 | 200µmφ | 50pA@5V | DC-1GHz power monitor | |
 | high speed | KPDE030 | 300µmφ | 100pA@5V | DC-600MHz power monitor | |
 | large area | KPDE086S | 860x860mm2 | 1nA@5V | hermetically sealed | Near InfraRed(NIR) sensors, LD & LED power monitors, Near InfraRed(NIR) spectroscopy, LD & LED aging equipments, Power meters |
 | large area | KPDE150 | 1500µmφ | 1µA@1V | ||
 | large area | KPDE300 | 3000µmφ | 1µA@1V | ||
 | mini Can | KPDE008-S | 80µmφ | 30pA@5V | Mini Can | For high-density packaging of multiple photodiode channels |
 | mini Can | KPDE020-S | 200µmφ | 50pA@5V | ||
 | mini Can | KPDE030-S | 300µmφ | 100pA@5V | ||
 | mini pig tail | KPDE008S-TU | 80µmφ | 30pA@5V | Mini Can pig tail | |
 | mini pig tail | KPDE030SA-TU | 300µmφ | 160pA@5V | ||
 | analog | KPDE004A | 45µmφ | 10pA@5V | hermetically sealed pig tail | 1-3Gbps analog receivers |
 | analog | KPDE008A | 80µmφ | 15pA@5V | 1-1.25Gbps analog receivers | |
 | L band | KPDE030SL | 300µmφ | 100pA@5V | hermetically sealed | Optical output monitor for DWDM |
| edge illuminated | KPEI2GC | 75x35µm2 | 20pA@5V | Chip Material | Sensitive area located on chip ege facet, Integrating surface hybrid on V-groove and PLC(Planar light-wave Circuit) platform |
| edge illuminated | KPEIMC-100 | 80x100µm2 | 35pA@5V | Active area on chip edge facet enlarged for efficient coupling of optical interconnection | |
| edge illuminated | KPEIMC-UDCOM | 100x120µm2 | 50pA@5V | photodiode with a large aperture laser back light power monitor | |
| array | KPDE005HA1 | 50µmφ | 30pA@5V | 100Gbps array Optical fiber butt-joint with 250µｍ pitch | |
| array | KPDE005HA2 | 50µmφ | 30pA@5V | ||
| array | KPDE005HA4 | 50µmφ | 30pA@5V | ||
| array | KPDE005HA8 | 50µmφ | 30pA@5V | ||
| array | KPDE005HA12 | 50µmφ | 30pA@5V | ||
| array | KPA8-2N | 80µmφ | 80pA@5V | 8ch array with 250µm pitch | Optical fiber butt-joint with 250µm pitch |
| array | KPA4-2N | 80µmφ | 80pA@5V | 4ch array with 250µm pitch |