InGaAs Photodiodes

KPEIMC-UDCOM

Features

Edge illuminated type for surface hybrid integration
Wide photodetecing area (100 x 120 µm)
Low dark current

Applications

Back light monitor of laser power
Optical interconnection
FTTH digital optical communication

Specifications

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit	Conditions
Reverse voltage	V_R	20	V
Maximum optical power input	P_imax	10	mW
Forward current	I_F	10	mA
Operating temperature	T_opr	-40 to +85	℃	To avoid a dew condensation
Storage temperature	T_stg	-40 to +85	℃	To avoid a dew condensation

Electrical and Optical characteristics

Parameter	Symbol	Value			Unit	Conditions
Parameter	Symbol	Min.	Typ.	Max	Unit	Conditions
Sensitive size	D		100x120 (µm)
Bandwidth	BW	0.8	1.5		GHz	P_i=-10dBm, V_R=5V, small signal modulation
Responsivity	R	0.5 0.7	0.55 0.75		A/W	λ=1310nm, P_i=-10dBm, V_R=5V λ=1550nm, P_i=-10dBm, V_R=5V
Dark current	I_D		50	300	pA	V_R=5V
Chip capacitance	C_chip		2.0	5.0	pF	V_R=5V, f=1MHz

チップ寸法

Parameter	寸法	公差	Unit
Chip size	450 x 450	+/- 25	µm
Chip height	250	+/- 20	µm
Sensitive size	100 x 120	+/- 10	µm

InGaAs Photodiodes : other products

Description	Model No.	Sensitive size	Dark Current	Package	Applications
Description	Model No.	Sensitive size	Typ.	Package	Applications
high speed	KPDEH16C	16µmφ	0.5nA@2V	Chip Material	25Gpbs receivers
high speed	KPDEH16DC	16µmφ	0.5nA@2V
high speed	KPDEH16DLC	40µmφ	0.5nA@2V
high speed	KPDE10GC-V2	28µmφ	10pA@5V		10Gbps receivers
high speed	KPDE10GC-V3	45µmφ	10pA@5V	flip chip type chip on carrier	100Gbps receivers Efficient coupling with a single mode fiber
high speed	KPDE004	45µmφ	20pA@5V	hermetically sealed pig tail	DC-3Gbps receivers
high speed	KPDE006	60µmφ	30pA@2V		DC-2.5Gbps receivers
high speed	KPDE008	80µmφ	30pA@5V		DC-1.25Gbps receivers
high speed	KPDE020	200µmφ	50pA@5V		DC-1GHz power monitor
high speed	KPDE030	300µmφ	100pA@5V		DC-600MHz power monitor
large area	KPDE086S	0.86 x 0.86 (mm)	1nA@5V	hermetically sealed	Near InfraRed(NIR) sensors, LD & LED power monitors, Near InfraRed(NIR) spectroscopy, LD & LED aging equipments, Power meters
large area	KPDE150	1500µmφ	1µA@1V
large area	KPDE300	3000µmφ	1µA@1V
mini Can	KPDE008-S	80µmφ	30pA@5V	Mini can, Pigtail	For high-density packaging of multiple photodiode channels
mini Can	KPDE020-S	200µmφ	50pA@5V
mini Can	KPDE030-S	300µmφ	100pA@5V
mini pig tail	KPDE008S-TU	80µmφ	30pA@5V	Mini Can pig tail
mini pig tail	KPDE030SA-TU	300µmφ	160pA@5V	Mini Can pig tail
analog	KPDE004A	45µmφ	10pA@5V	hermetically sealed pig tail	1-3Gbps analog receivers
analog	KPDE008A	80µmφ	15pA@5V	hermetically sealed pig tail	1-1.25Gbps analog receivers
L band	KPDE030SL	300µmφ	100pA@5V	hermetically sealed	Optical output monitor for DWDM
edge illuminated	KPEI2GC	75x35 (µm)	20pA@5V	Chip Material	Sensitive area located on chip ege facet, Integrating surface hybrid on V-groove and PLC(Planar light-wave Circuit) platform
edge illuminated	KPEIMC-100	80x100 (µm)	35pA@5V		Active area on chip edge facet enlarged for efficient coupling of optical interconnection
edge illuminated	KPEIMC-UDCOM	100x120 (µm)	50pA@5V		photodiode with a large aperture laser back light power monitor
array	KPDE005HA1	50µmφ	30pA@5V		100Gbps array Optical fiber butt-joint with 250µｍ pitch
array	KPDE005HA2	50µmφ	30pA@5V
array	KPDE005HA4	50µmφ	30pA@5V
array	KPDE005HA8	50µmφ	30pA@5V
array	KPDE005HA12	50µmφ	30pA@5V
array	KPA8-2N	80µmφ	80pA@5V	8ch array with 250µm pitch	Optical fiber butt-joint with 250µm pitch
array	KPA4-2N	80µmφ	80pA@5V	4ch array with 250µm pitch	Optical fiber butt-joint with 250µm pitch

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