HOME  ›  About KYOSEMI  ›  History

About KYOSEMI

History

History

April 1980 The company founded in Joyo City, Kyoto, capitalized at 10million yen.
May 1980 The company's plant established in Yodosaime-cho, Fushimi-ku, Kyoto.
December 1980 Tokyo Sales Office established in Setagaya-ku, Tokyo.
March 1989 Hokkaido Plant established in Kamisunagawa-cho, Sorachi-gun, Hokkaido.
June 1991 Hokkaido Semiconductor Corporation founded as 100% owned and subsidiary company.
December 1991 Hokkaido Semiconductor Corporation's plant established.
September 1992 Eniwa Research and Development Center established in Eniwa City, Hokkaido.
November 1998 Construction of Microgravity Utilization Laboratory(MUL) completed.
June 1999 North Semiconductor Corporation established under each 50% owned by both Kyosemi and Hokkaido Semiconductor.
April 2001 Hokkaido Semiconductor Corporation merged North Semiconductor Corporation.
June 2001 Headquarters relocated on present address of Fushimi-ku, Kyoto.
October 2001 Eniwa Operation acquired ISO9001:1994 certification.
March 2003 Company merged subsidiary Hokkaido Semiconductor.
April 2003 Company renamed from Kyoto Semiconductor Corporation to Kyosemi Corporation.
June 2004 Eniwa and Kamisunagawa Operations acquired ISO9001:2000 Certification.
August 2004 Eniwa and Kamisunagawa Operations acquired ISO14000:1996 certification.
May 2005 Tokyo Sales Office relocated to Shinjyuku-ku, Tokyo.
October 2005 Kyosemi Opto America Corporation(KOAC) established as a fully owned subsidiary sales company of Kyosemi Corp. in Santa Clara, CA,USA.
September 2006 Designated as an approved enterprise for "Innovative Management Plan" in Kyoto by new product development of UV sensor.
Company brochure image
最初の製品総覧表「オプトデバイスの京都セミコンダクター株式会社」1985年
「京都の八幡の竹を使って、エジソンがこの世に新しい光をもたらしたのが1879年のこと。それから1世紀もたたないうちに人類は、電球とは全く異質な半導体の光の時代に突入しました。」(裏表紙より) 1991年 「光が生命を育む」「光の技術を活かす」 1993年 北海道セミコンダクター株式会社の会社案内 1996年 「情報化社会の進展に伴い、より近くなりゆく世界各国。経済の国際化はとどまるところを知りません。」 2002年 「これからも光技術のパイオニアでありつづけます。」 2007年

Search Product

*Enter a Model No. (prefix/partial match)

New Products

InGaAs 10Gbps Photodiode Chip KPDE10GC-V3
Back-illuminated Photodiode Chip. Low dark current, High speed with Large active area (φ45um). Chip-on-Carrier type is also available.
Ultraviolet LED KED365US1
UV Surface Mount LED. For Bill validation, Medical applications and Photocatalytic reations.
12-cell Sphelar® basic modules
Micro solar modules for low power applications such as sensors, liquid crystals, etc.