2012

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2012-05-17	Press Release: Establishment of new company, Sphelar Power Corporation
2012-04-23	Press Release: Establishment of new company, Sphelar Power Corporation, by company split and planned capital increase through third-party allotment of shares to be allocated to the Innovation Network Corporation of Japan (INCJ) and Hitachi High-Technologies Corporation
2012-04-11	Optical communication at FOE 2012, Apr. 11-13, 2012. (Tokyo Big Sight, Japan)
2012-03-06	Optical communication and sensors at OFCNFOEC 2012, March 6-8, 2012. (Los Angeles Convention Center, Los Angeles, California, USA / Booth #1009)
2012-02-29	Sphelar^® technology and products at PV EXPO 2012, Feb 29-Mar 2, 2012. (Tokyo Big Sight, Japan)
2012-01-24	Optical communication and sensors at Photonics West 2012, Jan 24-26, 2012. (The Moscone Center, San Francisco, California, USA / Booth #4030)

InGaAs 10Gbps Photodiode Chip KPDE10GC-V3: Back-illuminated Photodiode Chip. Low dark current, High speed with Large active area (φ45um). Chip-on-Carrier type is also available.
Ultraviolet LED KED365US1: UV Surface Mount LED. For Bill validation, Medical applications and Photocatalytic reations.
12-cell Sphelar^® basic modules: Micro solar modules for low power applications such as sensors, liquid crystals, etc.

Press Release: Establishment of new company, Sphelar Power Corporation
Press Release: Establishment of new company, Sphelar Power Corporation, by company split and planned capital increase through third-party allotment of shares to be allocated to the Innovation Network Corporation of Japan (INCJ) and Hitachi High-Technologies Corporation
Optical communication at FOE 2012, Apr. 11-13, 2012. (Tokyo Big Sight, Japan)

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