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Phototransistors
Si Phototransistors
Si Phototransistors
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Model No
Option
Datasheet
Product name
Sensitive size
Sensitive wavelength
Photocurrent
Current amplification factor
Half angle
Package
Typ.[mm
2
]
Min.[nm]
Max.[nm]
Typ.[mA]
Conditions
Typ.
Conditions
Typ.
Conditions
KPT081M31
Si Phototransistors
0.64×0.64
400
1000
7
V
CE
=5V 100lx(@2856K)
600
V
CE
=5V I
C
=2mA
60
MOLD
KPT811H3
Si Phototransistors
0.64×0.64
-
1000
2
V
CE
=5V 100lx(@2856K)
600
V
CE
=5V I
C
=2mA
17
TO-CAN
KPT801HB2
Si Phototransistors
0.64×0.64
700
1100
2
V
CE
=5V 100lx(@2856K)
400
V
CE
=5V I
C
=2mA
17
TO-CAN
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