KPDA100-H8
Features
- 1mm diameter large Active area
- High gain
Applications
- Short wavelength optical communication
- Optical measurement
- Optical sensors
- Weak light signal detection
Specifications
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Reverse Current | IR | 1 | mA | |
| Forward current | IF | 10 | mA | |
| Operating temperature | Topr | -40 to +85 | ℃ | To avoid a dew condensation |
| Storage temperature | Tstg | -40 to +125 | ℃ | To avoid a dew condensation |
Electrical and Optical characteristics
| Parameter | Symbol | Value | Unit | Conditions | ||
|---|---|---|---|---|---|---|
| Min. | Typ. | Max | ||||
| Sensitive size | D | 1000 | µm | |||
| Sensitive wavelength | λ | 400 | 670(λp) | 1000 | nm | |
| Responsivity | R | 0.35 | A/W | VR=50V, λ=660nm | ||
| Breakdown voltage | VB | 100 | 130 | 160 | V | IR=100µA |
| Multiplication factor | M | 100 | - | VR=VB-1V | ||
| Dark current | ID | 0.5 | 1 | nA | VR=50V | |
| Terminal capacitance | Ct | 15 | pF | VR=100V, f=1MHz | ||
| Cutoff frequency | fc | 0.25 | GHz | M=100, RL=50Ω, λ=660nm | ||
Silicon Avalanche Photodiodes : other products
| Model No. | Sensitive size (µm dia.) | Peak Sensitive Wavelength (nm) | Resposivity | Multiplication Factor | Package | Applications | ||
|---|---|---|---|---|---|---|---|---|
| (A/W) | @λ(nm) | |||||||
| KPDA020-H8 | 200 | 670(λp) | 0.45 | 800 | 150 | TO-18, hermetically sealed | fc=1.5GHz | |
| KPDA050-H8 | 500 | 670(λp) | 0.45 | 800 | 150 | fc=0.4GHz | ||
| KPDA100-H8 | 1000 | 670(λp) | 0.35 | 660 | 150 | fc=0.25GHz | ||
| KPDA020P-H8 | 200 | 780(λp) | 0.45 | 850 | 150 | fc=1.3GHz | ||
| KPDA050P-H8 | 500 | 780(λp) | 0.45 | 850 | 150 | fc=1.2GHz | ||
| KPDA100P-H8 | 1000 | 780(λp) | 0.45 | 850 | 150 | fc=0.6GHz | ||







