Silicon Phototransistors

KPT081M32

Features

NPN phototransistor
Transparent epoxy potting
Low leak current

Applications

Optical switches
Optical encoders
Photo-isolator
Camera stroboscopes
Infrared sensors
Automatic control apparatus

Specifications

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit	Conditions
Collector-emitter voltage	Vceo	20	V
Emitter-collector voltage	Veco	5	V
Collector dissipation	P_D	75	mW
Operating temperature	T_opr	-20 to +85	℃	To avoid a dew condensation
Storage temperature	T_stg	-30 to +100	℃	To avoid a dew condensation

Electrical and Optical characteristics

Parameter	Symbol	Value			Unit	Conditions
Parameter	Symbol	Min.	Typ.	Max	Unit	Conditions
Sensitive size	S		0.64×0.64		mm
Sensitive wavelength	λ	400	800(λp)	1000	nm	λp=Peak wavelength
Photocurrent	IL		4		mA	V_CE=5V, 1000lx(@2856k)
Dark current	I_D		5	200	nA	V_CE=20V
Current amplification factor	hFE	600			-	V_CE=5V, I_C=2mA
Collector-Emitter Saturation Voltage	Vce(sat)			0.4	V	I_C=1mA, 1000lx(@2856k)
Rise/Fall Time	tr,tf		5		µS	V_CE=5V, I_C=2mA, R_L=100Ω
Half angle	2θ		90		deg

Silicon Phototransistors : other products

Model No.	Sensitive size (mm)	Peak Sensitive Wavelength (nm), Typ.	Photocurrent V_CE=5V		Half Angle (deg)	Package	Applications
Model No.	Sensitive size (mm)	Peak Sensitive Wavelength (nm), Typ.	(mA)	(IX)	Half Angle (deg)	Package	Applications
KPT801H	0.64×0.64	800(λp)	2	100	17	TO-18, hermetically sealed	Standard
KPT801HB	0.64×0.64	800(λp)	3	100	17		visible light cut type
KPT811H	0.64×0.64	800(λp)	2	100	17		With the base lead
KPT801C	0.64×0.64	800(λp)	4	1000	120	epoxy resin lens on φ3 ceramic stem	Ceramic type
KPT081M31	0.64×0.64	800(λp)	7	1000	60	φ3 plastic mold	Transparent resin?mold type
KPT081M32	0.64×0.64	800(λp)	4	1000	90	φ3 plastic mold	Transparent resin?mold type

Loading Time: Base Classes	0.0115
Controller Execution Time ( Products Item / Detail )	0.1329
Total Execution Time	0.1445

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