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KPT801H

KPT801H
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Features

  • NPN phototransistor packaged in a 2 leads TO-18
  • Glass lens
  • Low leak current

Applications

  • Optical switches
  • Optical encoders
  • Photo-isolator
  • Camera stroboscopes
  • Infrared sensors
  • Automatic control apparatus

Specifications

Absolute Maximum Ratings
ParameterSymbolValueUnitConditions
Collector-emitter voltageVceo20V
Emitter-collector voltageVeco5V
Operating temperatureTopr-25 to +125To avoid a dew condensation
Storage temperatureTstg-55 to +150To avoid a dew condensation
Electrical and Optical characteristics
ParameterSymbolValueUnitConditions
Min.Typ.Max
Sensitive sizeS0.64×0.64mm
Sensitive wavelengthλ700800(λp)1000Vλp=Peak wavelength
PhotocurrentIL2mAVCE=5V, 100lx(@2856k)
Dark currentID100200nAVCE=20V
Current amplification factorhFE600-VCE=5V, IC=2mA
Collector-Emitter Saturation VoltageVce(sat)0.4VIC=0.1mA, 100lx(@2856k)
Rise/Fall Timetr,tf5µSVCE=5V, IC=2mA, RL=100Ω
Half angle17deg
KPT801H

Silicon Phototransistors : other products

 Model No.Sensitive size
(mm)
Peak Sensitive Wavelength
(nm), Typ.
Photocurrent
VCE=5V
Half Angle
(deg)
PackageApplications
(mA)(IX)
KPT801H0.64×0.64800(λp)210017TO-18, hermetically sealedStandard
KPT801HB0.64×0.64800(λp)310017visible light cut type
KPT811H0.64×0.64800(λp)210017With the base lead
KPT801C0.64×0.64800(λp)41000120epoxy resin lens on φ3 ceramic stemCeramic type
KPT081M310.64×0.64800(λp)7100060φ3 plastic mold Transparent resin?mold type
KPT081M320.64×0.64800(λp)4100090
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