KPT801H
Features
- NPN phototransistor packaged in a 2 leads TO-18
- Glass lens
- Low leak current
Applications
- Optical switches
- Optical encoders
- Photo-isolator
- Camera stroboscopes
- Infrared sensors
- Automatic control apparatus
Specifications
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Collector-emitter voltage | Vceo | 20 | V | |
| Emitter-collector voltage | Veco | 5 | V | |
| Operating temperature | Topr | -25 to +125 | ℃ | To avoid a dew condensation |
| Storage temperature | Tstg | -55 to +150 | ℃ | To avoid a dew condensation |
Electrical and Optical characteristics
| Parameter | Symbol | Value | Unit | Conditions | ||
|---|---|---|---|---|---|---|
| Min. | Typ. | Max | ||||
| Sensitive size | S | 0.64×0.64 | mm | |||
| Sensitive wavelength | λ | 700 | 800(λp) | 1000 | V | λp=Peak wavelength |
| Photocurrent | IL | 2 | mA | VCE=5V, 100lx(@2856k) | ||
| Dark current | ID | 100 | 200 | nA | VCE=20V | |
| Current amplification factor | hFE | 600 | - | VCE=5V, IC=2mA | ||
| Collector-Emitter Saturation Voltage | Vce(sat) | 0.4 | V | IC=0.1mA, 100lx(@2856k) | ||
| Rise/Fall Time | tr,tf | 5 | µS | VCE=5V, IC=2mA, RL=100Ω | ||
| Half angle | 2θ | 17 | deg | |||
Silicon Phototransistors : other products
| Model No. | Sensitive size (mm) | Peak Sensitive Wavelength (nm), Typ. | Photocurrent VCE=5V | Half Angle (deg) | Package | Applications | ||
|---|---|---|---|---|---|---|---|---|
| (mA) | (IX) | |||||||
| KPT801H | 0.64×0.64 | 800(λp) | 2 | 100 | 17 | TO-18, hermetically sealed | Standard | |
| KPT801HB | 0.64×0.64 | 800(λp) | 3 | 100 | 17 | visible light cut type | ||
| KPT811H | 0.64×0.64 | 800(λp) | 2 | 100 | 17 | With the base lead | ||
| KPT801C | 0.64×0.64 | 800(λp) | 4 | 1000 | 120 | epoxy resin lens on φ3 ceramic stem | Ceramic type | |
| KPT081M31 | 0.64×0.64 | 800(λp) | 7 | 1000 | 60 | φ3 plastic mold | Transparent resin?mold type | |
| KPT081M32 | 0.64×0.64 | 800(λp) | 4 | 1000 | 90 | |||







