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Ultra Violet LEDs

KED365US1

KED365US1

Features

Peak emission wavelength, λ_P = 367nm
SMD type package
Standard type uses quartz window package

Applications

Optical instruments
Photocatalytic reactions
Fluorescent substance detection
Medical applications

Specifications

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit	Conditions
Forward current	I_F	30	mA	Ta=25℃
Peak forward current	I_FP	0.2	A	Puls width=100µs, Duty ration=1%
Reverse Current	I_R	100	mA
Collector dissipation	P_D	120	mW
Operating temperature	T_opr	-20 to +80	℃	To avoid a dew condensation
Storage temperature	T_stg	-30 to +85	℃	To avoid a dew condensation
Soldering temperature	T_sol	260	℃	Soldering time less than 5 seconds

Electrical and Optical characteristics

Parameter	Symbol	Value			Unit	Conditions
Parameter	Symbol	Min.	Typ.	Max	Unit	Conditions
Forward voltage	V_F		3.7	4.5	V	I_F=20mA
Reverse voltage	V_R			3	V	I_R=20mA
Optical output power	P_O		2.1		mW	I_F=20mA
Peak wavelength	λ	363	367(λp)	370	nm	λp=Peak wavelength, I_F=20mA
Spectral width	Δλ		15		nm	I_F=20mA
Half angle	2θ		100		deg	I_F=20mA

KED365US1

Ultra Violet LEDs : other products

	Model No.	Chip Material	Wavelength (nm)	Optical Output Power		Half Angle (deg)	Package	Applications
	Model No.	Chip Material	Wavelength (nm)	(mW)	@I_F(mA)	Half Angle (deg)	Package	Applications
	KED365US1	GaN	367(λp)	2.1	20	100	surface mount ceramic package	With a quartz window, Banknote identification equipment, LED excitation light sources for fluorescence
	KED373US1	InGaN	373(λp)	1.3	20	100	surface mount ceramic package
	KED365UH	GaN	367(λp)	0.7	20	16	TO-18, hermetically sealed	Banknote identification equipment, LED excitation light sources for fluorescence
	KED372UH	InGaN	373(λp)	1.5	20	12
	KED372UHB	InGaN	373(λp)	7.2	20	12
	KED378UH	InGaN	373(λp)	1.0	20	10	TO-46, hermetically sealed
	KED373UH	InGaN	373(λp)	1.5	20	100	TO-18, hermetically sealed
	KED405UH3	InGaN	405(λp)	5	20	100	TO-18, hermetically sealed	Optical instruments

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