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| Since its foundation in 1980, Kyosemi Corporation has been an R&D-focused opto-electronic manufacturer of photo-detecting diodes and light-emitting diodes (PDs and LEDs), establishing an integrated production line from front- end to back- end processing. At our inception, we successfully developed an AlGaAs liquid-phase epitaxy apparatus, based on an innovative, slow- cooling technique. Kyosemi is known as a pioneer that has helped lay the foundation for today's high brightness LEDs. |
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We are a manufacturer of optical semiconductor devices |
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We have the latest facilities and equipments for the design, manufacture, quality evaluation, and all other processes of opto-electronic devices. Since we carry out each and every step---from design, to front-end and back-end processing, all the way through to reliability checks---we can address customer-specific problems and produce prototypes that help fast-track product commercialization. We work to satisfy customers by both delivering products on time and assuring a high level of quality. We also supply products in various packages, such as hermetically sealed, plastic molded, and surface mounted, to meet a range of customer needs.
Our optical semiconductor devices are applied in the fields of optical communications and optical sensors, and measuring and control devices. |
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| opto-electronic devices |
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Optical communications |
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Kyosemi Corporation develops and manufactures photoelectric conversion devices used in telecommunications, Internet networking, and LAN (local area network) systems.
There are generally two kinds of systems.
One is long-haul (backbone) and metropolitan networking systems based on DWDM (dense wave division multiplexing), in which a huge volume of information is transmitted through one glass fiber. Another is FTTH (fiber to the home) systems.
Our long-wave photodiodes and opto-electronic modules are used in both systems and are incorporated into DVDM systems, ONTs (optical network terminals), optical routers,
optical transmitters, receivers, and other devices and equipment.
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Measuring and control devices |
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Kyosemi Corporation develops and manufactures optical semiconductor devices like photo-detecting diodes (PDs) and light-emitting diodes (LEDs) that are sensitive over a wide spectrum, from ultraviolet to long wavelengths up to infrared. Our standard products are compound semiconductor LEDs and detectors, Si photodiodes and phototransistors, and arrayed PD sensors.
Photo-detectors that receive images and optical signals are sometimes called sensors. These devices are used for a wide range of applications that include factory automation (FA), banknote readers, automatic control units, encoding systems, medical equipments, hazardous system monitoring, and disaster-prevention systems.
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Kyosemi Corporation develops and manufactures spherical micro solar cells (registered as Sphelar®) as a new product line. Sphelar® cells are processed to form positive (+) and negative (-) electrodes on a single crystal silicon sphere with a diameter of 1 to 2 mm. The Sphelar® cell is spherical, so it can capture light from all directions, thus improving its power generation capacity and light signal reception such as Aimulet.
Sphelar® cells are highly pliable, so can fit in various types of module shapes, such as transparent, flexible, domed, or vaulted, for various applications. Furthermore, they can facilitate any combination of connections in series and/or parallel. Connected in a series, Sphelar® cells can generate enough voltage for water electrolysis and a further application in combination with fuel cell. |
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| Sphelar® modules |
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Optical electric field sensor (Optical E-sensor) and optical magnetic field sensor (Optical H-sensor) |
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We have successfully brought to market both of optical electric field sensors (or optical E-sensors) and optical magnetic field sensors (or optical H-sensors). We also take advantage of integrated wave-guide technology in processing LiNbO3 single crystal wafers, starting from the design stage, to front-end and back-end processing, and through to final testing, so that we can fabricate optical E-sensors and optical H-sensors like those listed below.
LiNbO3 (Lithium Niobate: LN) is a compound of niobium, lithium, and oxygen with excellent electro-optic characteristics for controlling electrically the amplitude, phase, and polarization states of an optical beam passing through an LN optical wave-guide. These devices have thus been widely used as electro-optic modulators.
Optical E-sensors feature a wide frequency band, from 50Hz to 10GHz, and are used in a wide range of applications such as EMC measurement (namely, the free-space electric field strength measurement), electric field distribution in equipment, measurement of the distribution of electromagnetic radiation, and other areas. They are small and convenient for measuring in extremely narrow spaces and in hazardous environments.
Meanwhile, optical H-sensors are designed to combine a loop antenna element with an electro-optic modulator. These sensors have excellent features such as low invasiveness, high space resolution, and high-frequency response for precision near the field probe of the H-field. This type of modulator is widely used to measure magnetic field distribution around printed circuit boards and transmission antennas and to measure current distribution for cellular phones. Furthermore, it is being used increasingly more frequently in non-contact current probing and in the measuring of the specific absorption rate (SAR), which is used as an index of the biological effects of electromagnetic radiation. |
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| Optical E-sensor with patch antenna |
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RISA radiation detecting device |
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Conventional semiconductor radiation detectors have until now needed to be thick enough to absorb radiation. They have thus been fabricated with P/N junctions using highly pure single crystalline material in order to prevent current leakage due to the depletion of the thick semiconductor.
For example, in the case of CdTe (Cadmium Telluride), when energy radiation of more than 1 MeV is detected, the thickness of the detector must be more than 1 mm, even though CdTe has the largest absorption coefficient among related compound semiconductors. As well, a sophisticated P/N junction must be formed to prevent current leakage. The semiconductor element can become electrically damaged and deteriorated in a high-energy radiation environment of 1 kGy/h or greater, such as that of nuclear reactors, and radioactive waste and disposal facilities. It may therefore destabilize operations, cause short-term damage, and impair durability. Furthermore, radiation detectors such as iron dosimeters can't immediately measure radiation intensity at the location radiation is emitted, which prevents them from being used for other purposes.
Kyosemi Corporation, together with Tokyo University of Marine Science and Technology and Tokyo University, has successfully developed an innovative radiation detector to overcome the above-mentioned limitations. It is made up simply of a thin insulating layer deposited on the surface of the insulator substrate and at least one pair of electrodes. This means that, under irradiation, its conductance varies linearly in relation to radiation intensity.
Such a compact solid-state device features real-time and on-site radiation detection that takes advantage of a phenomenon based on RISA (radiation induced surface activation). It can also be used in high-dose and high-temperature environments, and can detect X-rays, α-rays, β-rays, γ-rays, and particle rays over a wide range, from low to high dose rates. It can be incorporated into products such as X-ray dosimeters, radioactive ray dosimeters, monitoring measurement system for radiation exposure in the medical field, and monitoring systems for radioactive leakage from accelerators and nuclear power plants.
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| RISA radiation detecting device |
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Our vision is to integrate opto-electronic technologies relating to optical communications, optical wave-guides, and optical sensors in order to create innovative products unique to Kyosemi Corporation, and to do business in next-generation information communication markets to cover sensors and ubiquitous networking.
The value of our company is to combine both technologies of opto-electronics and Sphelar® so that we will be able to provide an abundant diversity of products for such markets.
It is Kyosemi Corporation's mission to contribute to society by achieving the maximum corporate value. |
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