Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar
Optical Communication
InGaAs
Photodiodes
Flip-Chip type
InGaAs Photodiode
(Back surface illuminated type)
Edge Illuminated type
InGaAs Photodiode
InGaAs ROSA
with FPC(Flexible Printed Circuit)
InGaAs PD-TIA
Receivers
Silicon PD-TIA
Receiver
GaAs
PD & PD-TIAs
Si PIN
Photodiodes
Mini Can Si-PD
Laser diodes
VCSEL TOSA
Mini CanVCSEL
Packages
InGaAs
Linear Array
Optical Sensing and Control
LEDs
Point Source LEDs
Parallel Beam LEDs
Multi Wavelength LEDs
Ultra Violet GaN/InGaN LEDs
Visible LEDs
Infrared LEDs
Plastic Mold LEDs
Plastic Mold LEDs
Si PD
Si Photodiodes for General Uses
Si PIN Photodiodes
Si UV sensor
Si High Speed Photodiodes
Si photodiode array
Si PTr
Si APD
GaN/InGaN/AlGaN UV Sensor
InGaAs Photodiode with Peltier cooler
Spherical Micro Solar Cell
Sphelar® Array F12
Sphelar® One
Sphelar® Dome
SphelarVoice®
|
LED
|
Plastic Mold LEDs
|
Si-PD
|
Si-PTr
|
Si-APD
|
|
GaN/InGaN/AlGaN UV Sensor
|
InGaAs Photodiode with Peltier cooler
|
Point-source Infrared LED
KED050CXH
Features
High reliabili ty and long life
50µm emitting area
Applications
High speed optical sensors
Optical Encoders
Maximum ratings
Item
Symbol
Value
Units
Forward Current
I
F
80
mA
Reverse Voltage
V
R
3
V
Operating Temperature
T
opr
-20 ~ +80
ºC
Storage Temperature
T
stg
-30 ~ +100
ºC
Characteristics (Ta=25ºC unless otherwise noted.)
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Forward Voltage
V
F
2.0
2.4
V
I
F
= 50mA
Reverse Current
I
R
10
µA
V
R
= 3V
Optical Output Power
P
O
2.4
mW
I
F
= 50mA
Peak Emission Wavelength
λ
P
850
nm
I
F
= 50mA
Cutoff Frequency
fc
25
MHz
I
F
= 50mA
|
LED
|
Plastic Mold LEDs
|
Si-PD
|
Si-PTr
|
Si-APD
|
|
GaN/InGaN/AlGaN UV Sensor
|
InGaAs Photodiode with Peltier cooler
|
