Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar

	InGaAs Photodiodes

	Flip-Chip type InGaAs Photodiode (Back surface illuminated type)

	Edge Illuminated type InGaAs Photodiode

	InGaAs ROSA with FPC(Flexible Printed Circuit)

	InGaAs PD-TIA Receivers

	Silicon PD-TIA Receiver

	GaAs PD & PD-TIAs

	Si PIN Photodiodes

	Mini Can Si-PD

	Laser diodes

	VCSEL TOSA

	Mini CanVCSEL

	Packages

	InGaAs Linear Array

Plastic Mold LEDs

Si PD

	Si Photodiodes for General Uses

	Si PIN Photodiodes

	Si UV sensor

	Si High Speed Photodiodes

	Si photodiode array

Si PTr

Si APD

GaN/InGaN/AlGaN UV Sensor

InGaAs Photodiode with Peltier cooler

GaN UV LED

KED365UMS1

Dimensions ( unit: mm)

Parameter	Symbol	Value	Units	Note
Forward current	IF	25	mA	Ta=25°C
Peak forward current	IFP	0.2	A	Pulse width=100μs, Duty ratio=1%
Reverse current	IR	100	mA
Power dissipation	PD	120	mW
Operating p g temperature	Topr	-20 to +80	°C	Avoid dew condensation
Storage temperature	Tstg	-40 to +85	°C	Avoid dew condensation
Soldering temperature	Tsol	260	°C	5s max

Parameter	Symbol	Min.	Typ.	Max.	Units	Test Conditions
Forward voltage	VF	-	3.7	4.5	V	IF = 20mA
Reverse voltage	VR	-	-	3	V	IF = 20mA
Optical output power	PO	-	2.1	-	mW	IF = 20mA
Peak emission wavelength	λP	363	367	370	nm	IF = 20mA
Spectral bandwidth at 50%	Δλ	-	15	-	nm	IF = 20mA
Half angle	2θ	-	100	-	deg.	IF = 20mA