Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar

	InGaAs Photodiodes

	Flip-Chip type InGaAs Photodiode (Back surface illuminated type)

	Edge Illuminated type InGaAs Photodiode

	InGaAs ROSA with FPC(Flexible Printed Circuit)

	InGaAs PD-TIA Receivers

	Silicon PD-TIA Receiver

	GaAs PD & PD-TIAs

	Si PIN Photodiodes

	Mini Can Si-PD

	Laser diodes

	VCSEL TOSA

	Mini CanVCSEL

	Packages

	InGaAs Linear Array

Plastic Mold LEDs

Si PD

	Si Photodiodes for General Uses

	Si PIN Photodiodes

	Si UV sensor

	Si High Speed Photodiodes

	Si photodiode array

Si PTr

Si APD

GaN/InGaN/AlGaN UV Sensor

InGaAs Photodiode with Peltier cooler

Ultraviolet LED

KED372UH

Item	Symbol	Value	Units
Forward Current	IF	30	mA
Peak Forward Current	IFP	0.2 (Pulse width = 100µs, Duty ratio = 1%)	A
Reverse Current (Zener diode)	IR	100	mA
Power Dissipation	PD	120	mW
Operating Temperature	Topr	-20 ~ +80	°C
Storage Temperature	Tstg	-30 ~ +100	°C
Soldering Temperature	Tsol	260 (5sec)	°C

Parameter	Symbol	Min.	Typ.	Max.	Units	Test Conditions
Forward Voltage	VF		3.6	4.5	V	IF = 20mA
Reverse Voltage (Zener diode)	VR			3	V	IR = 20mA
Optical Output Power	PO		1.5		mW	IF = 20mA
Peak Emission Wavelength	λP	370	373	380	nm	IF = 20mA
Spectral Bandwidth at 50%	Δλ		15		nm	IF = 20mA
Half angle	2θ		12		deg	IF = 20mA