Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar
Optical Communication
InGaAs
Photodiodes
Flip-Chip type
InGaAs Photodiode
(Back surface illuminated type)
Edge Illuminated type
InGaAs Photodiode
InGaAs ROSA
with FPC(Flexible Printed Circuit)
InGaAs PD-TIA
Receivers
Silicon PD-TIA
Receiver
GaAs
PD & PD-TIAs
Si PIN
Photodiodes
Mini Can Si-PD
Laser diodes
VCSEL TOSA
Mini CanVCSEL
Packages
InGaAs
Linear Array
Optical Sensing and Control
LEDs
Point Source LEDs
Parallel Beam LEDs
Multi Wavelength LEDs
Ultra Violet GaN/InGaN LEDs
Visible LEDs
Infrared LEDs
Plastic Mold LEDs
Plastic Mold LEDs
Si PD
Si Photodiodes for General Uses
Si PIN Photodiodes
Si UV sensor
Si High Speed Photodiodes
Si photodiode array
Si PTr
Si APD
GaN/InGaN/AlGaN UV Sensor
InGaAs Photodiode with Peltier cooler
Spherical Micro Solar Cell
Sphelar® Array F12
Sphelar® One
Sphelar® Dome
SphelarVoice®
|
LED
|
Plastic Mold LEDs
|
Si-PD
|
Si-PTr
|
Si-APD
|
|
GaN/InGaN/AlGaN UV Sensor
|
InGaAs Photodiode with Peltier cooler
|
GaAlAs Red LED
KED661M32A
Features
Transparent epoxy mold
Broad directivity
Direct modulation
Applications
Optical switches
Optical instruments
Automatic control apparatus
Maximum ratings
Item
Symbol
Value
Units
Forward Current
I
F
50
mA
Peak Forward Current
I
FP
0.5
(Pulse width = 100µs, Duty ratio = 1%)
A
Reverse Voltage
V
R
6
V
Power Dissipation
P
D
120
mW
Operating Temperature
T
opr
-20 ~ + 80
°C
Stor age Temperature
T
stg
-30 ~ +100
°C
Soldering Temperature
T
sol
260 (5sec max)
°C
Characteristics (Ta=25°C unless otherwise noted.)
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Forward Voltage
V
F
1.8
2.3
V
I
F
= 20mA
Reverse Current
I
R
10
µA
V
R
= 6V
Optical Output Power
V
150
mcd
I
F
= 20mA
Peak Emission Wavelength
λ
P
660
nm
I
F
= 20mA
Spectral Bandwidth at 50%
Δλ
25
nm
I
F
= 20mA
Half angle
Δθ
±45
deg.
I
F
= 20mA
|
LED
|
Plastic Mold LEDs
|
Si-PD
|
Si-PTr
|
Si-APD
|
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GaN/InGaN/AlGaN UV Sensor
|
InGaAs Photodiode with Peltier cooler
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