Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar

	InGaAs Photodiodes

	Flip-Chip type InGaAs Photodiode (Back surface illuminated type)

	Edge Illuminated type InGaAs Photodiode

	InGaAs ROSA with FPC(Flexible Printed Circuit)

	InGaAs PD-TIA Receivers

	Silicon PD-TIA Receiver

	GaAs PD & PD-TIAs

	Si PIN Photodiodes

	Mini Can Si-PD

	Laser diodes

	VCSEL TOSA

	Mini CanVCSEL

	Packages

	InGaAs Linear Array

Plastic Mold LEDs

Si PD

	Si Photodiodes for General Uses

	Si PIN Photodiodes

	Si UV sensor

	Si High Speed Photodiodes

	Si photodiode array

Si PTr

Si APD

GaN/InGaN/AlGaN UV Sensor

InGaAs Photodiode with Peltier cooler

Multi-wavelength LED

KED694M31D

Item	Symbol	Value		Units
Item	Symbol	Infrared	Red	Units
Forward Current	IF	50	30	mA
Peak Foward Current^*1	IFP	0.5	0.3	A
Reverse Voltage	VR	6	6	V
Power Dissipation^*2	PD	70	70	mW
Operating Temperature	Topr	-20 ~ + 80		°C
Storage Temperature	Tstg	-30 ~ +100		°C
Soldering Temperature^*3	Tsol	260		°C

*1:Pulse width = 100µs, Duty ratio = 0.1%
*2:Max. total power dissipation=100mW
*3:Max 5 sec.

Parameter		Symbol	Typ.	Max.	Units	Test Conditions
Forward Voltage	Infrared	VF	1.2	1.4	V	IF = 20mA IF = 20mA
Forward Voltage	Red	VF	1.7	2.0	V	IF = 20mA IF = 20mA
Reverse Current		IR		10	µA	VR = 6V
Optical Output Power	Infrared	PO	2. 0		mW	IF = 20mA IF = 20mA
Optical Output Power	Red	PO	4.0		mW	IF = 20mA IF = 20mA
Peak Emission Wavelength	Infrared	λP	940		nm	IF = 20mA IF = 20mA
Peak Emission Wavelength	Red	λP	660		nm	IF = 20mA IF = 20mA
Spectral Bandwidth at 50%	Infrared	Δλ	50		nm	IF = 20mA IF = 20mA
Spectral Bandwidth at 50%	Red	Δλ	20		nm	IF = 20mA IF = 20mA
Half Intensity Angle	Infrared	2θ	21		deg	IF = 20mA IF = 20mA
Half Intensity Angle	Red	2θ	38		deg	IF = 20mA IF = 20mA