Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar

	InGaAs Photodiodes

	Flip-Chip type InGaAs Photodiode (Back surface illuminated type)

	Edge Illuminated type InGaAs Photodiode

	InGaAs ROSA with FPC(Flexible Printed Circuit)

	InGaAs PD-TIA Receivers

	Silicon PD-TIA Receiver

	GaAs PD & PD-TIAs

	Si PIN Photodiodes

	Mini Can Si-PD

	Laser diodes

	VCSEL TOSA

	Mini CanVCSEL

	Packages

	InGaAs Linear Array

Plastic Mold LEDs

Si PD

	Si Photodiodes for General Uses

	Si PIN Photodiodes

	Si UV sensor

	Si High Speed Photodiodes

	Si photodiode array

Si PTr

Si APD

GaN/InGaN/AlGaN UV Sensor

InGaAs Photodiode with Peltier cooler

GaAlAs Infrared LED

KED862M51

Item	Symbol	Value	Units
Forward Current	IF	100	mA
Peak Forward Current	IFP	1 (Pulse width = 100µs, Duty ratio = 1%)	A
Reverse Voltage	VR	5	V
Power Dissipation	PD	150	mW
Operating Temperature	Topr	-30 ~ + 85	°C
Storage Temperature	Tstg	-30 ~ +100	°C
Soldering Temperature	Tsol	260 (5sec max)	°C

Parameter	Symbol	Typ.	Max.	Units	Test Conditions
Forward Voltage	VF	1.5	1.8	V	IF = 50mA
Reverse Current	IR		10	µA	VR = 5V
Optical Output Power	PO	22		mW	IF = 50mA
Peak Emission Wavelength	λP	865		nm	IF = 50mA
Spectral Bandwidth at 50%	Δλ	40		nm	IF = 50mA
Half angle	Δθ	±20		deg.	IF = 50mA
Rise time(10% - 90%)	tr	25		ns	IF = 50mA
Fall time(10% - 90%)	tf	15		ns	IF = 50mA