Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar

	InGaAs Photodiodes

	Flip-Chip type InGaAs Photodiode (Back surface illuminated type)

	Edge Illuminated type InGaAs Photodiode

	InGaAs ROSA with FPC(Flexible Printed Circuit)

	InGaAs PD-TIA Receivers

	Silicon PD-TIA Receiver

	GaAs PD & PD-TIAs

	Si PIN Photodiodes

	Mini Can Si-PD

	Laser diodes

	VCSEL TOSA

	Mini CanVCSEL

	Packages

	InGaAs Linear Array

Plastic Mold LEDs

Si PD

	Si Photodiodes for General Uses

	Si PIN Photodiodes

	Si UV sensor

	Si High Speed Photodiodes

	Si photodiode array

Si PTr

Si APD

GaN/InGaN/AlGaN UV Sensor

InGaAs Photodiode with Peltier cooler

Si Photodiode

KPD101M32

Item	Symbol	Value	Units
Reverse Voltage	VR	10	V
Reverse Current	IR	1	mA
Forward Current	IF	10	mA
Operating Temperature	Topr	-20 ~ + 80	°C
Storage Temperature	Tstg	-20 ~ +100	°C
Soldering Temperature	Tsol	260 (5sec max)	°C

Parameter	Symbol	Min.	Typ.	Max.	Units	Test Conditions
Active Area	S	0.81x 0.81			mm
Operating Voltage	VR0			5	V
Sensitive Wavelength	λ	400	850(λP)	1000	mm	λP = Peak wavelength
Open Circuit Voltage	Vop		400		mV	1000lux(@2856K)
Short Circuit Current	Ish		16		µA	1000lux(@2856K)
Dark Current	Id			10	nA	VR = 5V
Capacitance	Ct		6		pF	VR = 5V, f = 1MHz
Half angle	Δθ		±45		deg.