Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar
Optical Communication
InGaAs
Photodiodes
Flip-Chip type
InGaAs Photodiode
(Back surface illuminated type)
Edge Illuminated type
InGaAs Photodiode
InGaAs ROSA
with FPC(Flexible Printed Circuit)
InGaAs PD-TIA
Receivers
Silicon PD-TIA
Receiver
GaAs
PD & PD-TIAs
Si PIN
Photodiodes
Mini Can Si-PD
Laser diodes
VCSEL TOSA
Mini CanVCSEL
Packages
InGaAs
Linear Array
Optical Sensing and Control
LEDs
Point Source LEDs
Parallel Beam LEDs
Multi Wavelength LEDs
Ultra Violet GaN/InGaN LEDs
Visible LEDs
Infrared LEDs
Plastic Mold LEDs
Plastic Mold LEDs
Si PD
Si Photodiodes for General Uses
Si PIN Photodiodes
Si UV sensor
Si High Speed Photodiodes
Si photodiode array
Si PTr
Si APD
GaN/InGaN/AlGaN UV Sensor
InGaAs Photodiode with Peltier cooler
Spherical Micro Solar Cell
Sphelar® Array F12
Sphelar® One
Sphelar® Dome
SphelarVoice®
|
LED
|
Plastic Mold LEDs
|
Si-PD
|
Si-PTr
|
Si-APD
|
|
GaN/InGaN/AlGaN UV Sensor
|
InGaAs Photodiode with Peltier cooler
|
Si Photodiode
KPD1801H
Features
High sensitivity provided by glass lens
Sharp directivity
Hermetic seal type for high reliability uses.
Applications
Optical switches
Optical encoders
Remote control
Sensors and industrial controls
Maximum ratings
Item
Symbol
Value
Units
Reverse Voltage
V
R
10
V
Reverse Current
I
R
500
µA
Forward Current
I
F
10
mA
Operating Temperature
T
opr
-40 ~ +125
°C
Storage Temperature
T
stg
-55 ~ +150
°C
Characteristics (Ta=25°C unless otherwise noted.)
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Active Area
S
1.5x 1.8
mm
Operating Voltage
V
R0
5
V
Sensitive Wavelength
λ
400
840(
λ
P
)
1000
nm
λ
P
= Peak wavelength
Open Circuit Voltage
V
op
450
mV
1000lux(@2856K)
Short Circuit Current
I
sh
70
µA
Dark Current
I
d
1
nA
V
R
= 5V
Capacitance
C
t
250
pF
V
R
= 0V, f = 1MHz
|
LED
|
Plastic Mold LEDs
|
Si-PD
|
Si-PTr
|
Si-APD
|
|
GaN/InGaN/AlGaN UV Sensor
|
InGaAs Photodiode with Peltier cooler
|
