Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar

	InGaAs Photodiodes

	Flip-Chip type InGaAs Photodiode (Back surface illuminated type)

	Edge Illuminated type InGaAs Photodiode

	InGaAs ROSA with FPC(Flexible Printed Circuit)

	InGaAs PD-TIA Receivers

	Silicon PD-TIA Receiver

	GaAs PD & PD-TIAs

	Si PIN Photodiodes

	Mini Can Si-PD

	Laser diodes

	VCSEL TOSA

	Mini CanVCSEL

	Packages

	InGaAs Linear Array

Plastic Mold LEDs

Si PD

	Si Photodiodes for General Uses

	Si PIN Photodiodes

	Si UV sensor

	Si High Speed Photodiodes

	Si photodiode array

Si PTr

Si APD

GaN/InGaN/AlGaN UV Sensor

InGaAs Photodiode with Peltier cooler

Si Avalanche Photodiode

KPDA020 & KPDA050

KPDA020-H8 / KPDE050-H8

Item	Symbol	Value	Units
Reverse Current	IR	200	µA
Forward Current	IF	10	mA
Operating Temperature	Top	-40 to +85	°C
Storage Temperature	Tstr	-40 to +125	°C

Parameter		Symbol	Min.	Typ.	Max.	Units	Test Conditions
Active Dia.	KPDA020	D	200			µm
	KPDA050		200
	KPDA050		500
Sensitive Wavelength		λ	400 - 1000			nm
Responsivity		R	0.4	0.45	-	A/W	VR = 50V, λ = 800nm
Breakdown Voltage		Vb	100	130	160	V	ID = 100µA
Gain		M	100	150	200	-	Ip = 10nA, RL = 1kΩ
Excess Noise Factor		x	-	M^0.25		-	M = 100
Dark Current		ID	-	0.3	1	nA	VR = 50V
Capacitance	KPDA020	CT	-	1.5	2	pF	VR = 0.9Vb, f = 1MHz
Capacitance	KPDA050	CT	-	5	7	pF	VR = 0.9Vb, f = 1MHz
Cutoff Frequency	KPDA020	Fc	-	1.5	-	GHz	M = 100, RL = 50Ω , λ = 660nm
Cutoff Frequency	KPDA050	Fc	-	0.4	-	GHz	M = 100, RL = 50Ω , λ = 660nm