Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar

	InGaAs Photodiodes

	Flip-Chip type InGaAs Photodiode (Back surface illuminated type)

	Edge Illuminated type InGaAs Photodiode

	InGaAs ROSA with FPC(Flexible Printed Circuit)

	InGaAs PD-TIA Receivers

	Silicon PD-TIA Receiver

	GaAs PD & PD-TIAs

	Si PIN Photodiodes

	Mini Can Si-PD

	Laser diodes

	VCSEL TOSA

	Mini CanVCSEL

	Packages

	InGaAs Linear Array

Plastic Mold LEDs

Si PD

	Si Photodiodes for General Uses

	Si PIN Photodiodes

	Si UV sensor

	Si High Speed Photodiodes

	Si photodiode array

Si PTr

Si APD

GaN/InGaN/AlGaN UV Sensor

InGaAs Photodiode with Peltier cooler

Si Photodiode

KPDU500F & KPDU500QW

Item	Symbol	Value	Units
Reverse Voltage	VR	15	V
Reverse Current	IR	1000	µA
Forward Current	IF	10	mA
Operating Temperature	Topr	-20 ~ +65	°C
StorageTemperature	Tstg	-30 ~ +80	°C

Parameter		Symbol	Min.	Typ.	Max.	Units	Test Conditions
Active Area		S		4.46x4.46		mm
Operating Voltage		VRO		0		V
Sensitive Wavelength	500F	λ	244	254	264	nm	λP = Peak wavelength
Sensitive Wavelength	500QW	λ	200	800(λP)	1100	nm	λP = Peak wavelength
Responsivity	500F	R	18	30			λ = 254nm
	500QW		100	105			λ = 254nm
			110	120		mA/W	λ = 365nm
			160	185			λ = 405nm
			210	220			λ = 436nm
Dark Current		Id		20	50	nA	VR = 5V
Capacitance		Ct		50	100	pF	V = 0V, f = 1MHz