Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar

	InGaAs Photodiodes

	Flip-Chip type InGaAs Photodiode (Back surface illuminated type)

	Edge Illuminated type InGaAs Photodiode

	InGaAs ROSA with FPC(Flexible Printed Circuit)

	InGaAs PD-TIA Receivers

	Silicon PD-TIA Receiver

	GaAs PD & PD-TIAs

	Si PIN Photodiodes

	Mini Can Si-PD

	Laser diodes

	VCSEL TOSA

	Mini CanVCSEL

	Packages

	InGaAs Linear Array

Plastic Mold LEDs

Si PD

	Si Photodiodes for General Uses

	Si PIN Photodiodes

	Si UV sensor

	Si High Speed Photodiodes

	Si photodiode array

Si PTr

Si APD

GaN/InGaN/AlGaN UV Sensor

InGaAs Photodiode with Peltier cooler

Si Phototransistor

KPT081M32

Item	Symbol	Value	Units
Collector •Emitter Vol.	Vceo	20	V
Emitter •Collector Vol.	Veco	5	V
Collector •Base Vol.	Vcbo	-	V
Emitter •Base Vol.	Vebo	-	V
Collector Dissipation	Po	75	mW
Operating Temperature	Topr	-25 ~ +85	°C
Storage Temperature	Tstg	-30 ~ +100	°C

Parameter	Symbol	Min.	Typ.	Max.	Units	Test Conditions
Active Area	S	0.64x0.64			mm
Sensitive Wavelength	λ	400	880(λp)	1000	nm	λp = Peak wavelength
Photocurrent	IL		4		mA	Vce = 5V, 1000lux(@2856K)
Dark Current	Iceo		5	200	nA	Vce = 20V
Current Amplification Factor	hFE	600				Vce = 5V, IC = 2mA
Collector•Emitter Saturation Voltage	Vce(sat)			0.4	V	Ic = 1mA, 1000lux(@2856K)
Rise/Fall Time	tr , tf		5		µs	Vce = 5V, IC = 2mA, RL = 100Ω
Half angle	Δθ		±45			deg.