Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar

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InGaAs Photodiode Array

KPA4-2N/8-2N (4/8 Channel)

Description

4- and 8-channel arrays with 250 micron (KPA4-2N and KPA8-2N, respectively) pitch are available as a standard product. Other number of channels, array pitch or a Si bench assembled array are available as an option.

Specifications

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit
Reverse voltage	VR	20	V
Maximum optical power input	Pmax	10	mW
Forward current	IF	10	mA
Operating ambient temperature	Ta	-40 to +85	°C
Storage temperature	TSTG	-40 to +85	°C

Characteristics (VR = 5V, Ta = 25°C unless otherwise noted)

Parameter		Test conditions	Symbol	Min.	Typical	Max.	Unit
Active diameter			D		80		µm
Bandwidth		λ = 1550nm, Pin = -10dBm small signal modulation	B		2.0		GHz
Responsivity	@1310nm	Pin = 0dBm	R	0.8			A/W
Responsivity	@1550nm	Pin = 0dBm	R	0.85			A/W
Cross talk			X		-35		dB
Dark current			ID		80		pA
Chip capacitance		f = 1MHz	Cchip		4.0	6.0	pF

Specifications are subject to change without notice.

Characteristics of respective PD elements