Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar Kyosemi's Japanese Website Kyosemi's English Website
Kyosemi Corporation Sitemap Terms of Use
About UsProductsContact Us
Products
Optical Communication
InGaAs
Photodiodes
Flip-Chip type
InGaAs Photodiode
(Back surface illuminated type)
Edge Illuminated type
InGaAs Photodiode
InGaAs ROSA
with FPC(Flexible Printed Circuit)
InGaAs PD-TIA
Receivers
Silicon PD-TIA
Receiver
GaAs
PD & PD-TIAs
Si PIN
Photodiodes
Mini Can Si-PD
Laser diodes
VCSEL TOSA
Mini CanVCSEL
Packages
InGaAs
Linear Array
Optical Sensing and Control
LEDs
Point Source LEDs
Parallel Beam LEDs
Multi Wavelength LEDs
Ultra Violet GaN/InGaN LEDs
Visible LEDs
Infrared LEDs
Plastic Mold LEDs
Plastic Mold LEDs
Si PD
Si Photodiodes for General Uses
Si PIN Photodiodes
Si UV sensor
Si High Speed Photodiodes
Si photodiode array
Si PTr
Si APD
GaN/InGaN/AlGaN UV Sensor
InGaAs Photodiode with Peltier cooler
Spherical Micro Solar Cell
Sphelar® Array F12
Sphelar® One
Sphelar® Dome
SphelarVoice®
Quick FAQ for Kyosemi Corporation

Optical Communication Components

Low Dark Current Hight Speed InGaAs Photodiode

KPDE004

Features

  • Low capacitance and high speed with a PIN structure
  • Low dark current
  • High reliability
  • Pigtail type is available as an option

Applications

  • Digital and analog optical communication
  • Optical LAN
  • OTDR
 

Description

Reliable planar InGaAs photodiodes are packaged in hermetically sealed cans with an AR coated glass window or an AR coated ball lens. KPDE004 has the sensitive area of 45mm dia. and it can be efficiently coupled with a single mode fiber through a ball lens cap. The pigtail type, KPDE004T is available with various industry-standard connectors.

Specifications

Absolute Maximum Ratings

Item Symbol Value Unit
Reverse voltage VR 20 V
Maximum optical power input Pmax 5 mW
Forward current IF 10 mA
Operating ambient temperature Ta -40 to +85 °C
Storage temperature Tstg -40 to +85 °C

Characteristics (VR = 5V, Ta = 25°C unless otherwise noted)

Parameter Symbol Min. Typ. Max. Unit Test Conditions
Active diameter D   45   µm  
Bandwidth B   4.0   GHz Pin = -10dBm, small signal modulation
Responsivity @1310nm R 0.8 0.9   A/W  
@1550nm R 0.9 1.0   A/W  
Dark current ID   20 80 pA  
Chip capacitance Cchip   0.35 0.50 pF f = 1MHz
Total capacitance C   0.55 0.80 pF f = 1MHz
Responsivity uniformity ΔR -0.2   +0.5 dB λ = 1530 - 1610nm
Ta = -10 to +85°C

Specifications are subject to change without notice.


Copyright (C) 2005-2010 Kyosemi Corporation. All Rights Reserved.