High Sensitive InGaAs Photodiode
KPDE100
Features
- 1mm sq. large sensitive area
- Low dark current
- Low voltage operation
Applications
- Near IR sensors
- LD and LED power monitor
- Near IR spectroscopy
- Power meters
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Description
Reliable planar InGaAs photodiodes are packaged in hermetically sealed cans. The active diameter of KPDE100 is 1mm sq. and its dark current is minimized with advanced passivation technologies. Larger area PD’s or array types are available as options.
Specifications
Absolute Maximum Ratings
| Item |
Symbol |
Value |
Unit |
| Reverse voltage |
VR |
20 |
V |
| Maximum optical power input |
Pmax |
50 |
mW |
| Forward current |
IF |
50 |
mA |
| Operating ambient temperature |
Ta |
-40 to +85 |
°C |
| Storage temperature |
Tstg |
-40 to +85 |
°C |
Characteristics (VR = 5V, Ta = 25°C unless otherwise noted)
| Parameter |
Symbol |
Min. |
Typ. |
Max. |
Unit |
Test Conditions |
| Active area |
S |
0.86×0.86 |
mm |
|
| Bandwidth |
B |
|
30 |
|
MHz |
Pin = -10dBm, small signal modulation |
| Responsivity |
@1310nm |
R |
0.8 |
0.9 |
|
A/W |
|
| @1550nm |
R |
0.9 |
1.0 |
|
A/W |
|
| Dark current |
ID |
|
1.0 |
10 |
nA |
|
| Chip capacitance |
Cchip |
|
45 |
60 |
pF |
f = 1MHz |
| Total capacitance |
C |
|
45 |
60 |
pF |
f = 1MHz |
| Responsivity uniformity |
ΔR |
-0.2 |
|
+0.5 |
dB |
λ = 1530-1610nm
Ts = -10 to +85°C |
Specifications are subject to change without notice.
