Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar

Optical Communication

	InGaAs Photodiodes

	Flip-Chip type InGaAs Photodiode (Back surface illuminated type)

	Edge Illuminated type InGaAs Photodiode

	InGaAs ROSA with FPC(Flexible Printed Circuit)

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	GaAs PD & PD-TIAs

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	Packages

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Optical Sensing and Control

LEDs

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Si PTr

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GaN/InGaN/AlGaN UV Sensor

InGaAs Photodiode with Peltier cooler

Spherical Micro Solar Cell


	Sphelar® Array F12

	Sphelar® One

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	SphelarVoice®

InGaAs Photodiode for 10Gbps

KPDE10GC-V2

Features

Low cost
Surface illuminated type
High reliability

Description

KPDE10GC-V2 has the detectable area of 28μm dia. and it can be efficiently coupled with a single mode fiber through the ball lens cap. It is low cost type PD.

Specifications

Maximum Ratings

Item	Symbol	Value	Unit
Reverse voltage	VR	15	V
Maximum optical power input	Pmax	5	mW
Forward current	IF	10	mA
Operating ambient temperature	Top	-40 to +85	°C
Storage tempareture	Tstg	-40 to +85	°C

Electrical Optical Characteristics(VR = 5V, Tc=25°C unless othewise noted)

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Dark Current	Id	-	-	10	200	pA
Capacitance	C	f = 1MHz	-	0.17	0.35	pF
Responsivity	R	λ = 1310nm	0.8	0.85	-	A/W
Responsivity	R	λ = 1550nm	0.85	0.95	-	A/W
Band Width	BW	λ = 1550nm, Pin = -10dBm	10	14	-	GHz