Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar

	InGaAs Photodiodes

	Flip-Chip type InGaAs Photodiode (Back surface illuminated type)

	Edge Illuminated type InGaAs Photodiode

	InGaAs ROSA with FPC(Flexible Printed Circuit)

	InGaAs PD-TIA Receivers

	Silicon PD-TIA Receiver

	GaAs PD & PD-TIAs

	Si PIN Photodiodes

	Mini Can Si-PD

	Laser diodes

	VCSEL TOSA

	Mini CanVCSEL

	Packages

	InGaAs Linear Array

Plastic Mold LEDs

Si PD

	Si Photodiodes for General Uses

	Si PIN Photodiodes

	Si UV sensor

	Si High Speed Photodiodes

	Si photodiode array

Si PTr

Si APD

GaN/InGaN/AlGaN UV Sensor

InGaAs Photodiode with Peltier cooler

InGaAs Photodiode for 10Gbps

KPDE10GC-V3

KPDE10GC-V3 has an active area with diameter of 45µm, and it can be efficiently coupled with a single mode fiber through the ball lens cap.

Item	Symbol	Value	Unit
Reverse voltage	VR	15	V
Maximum optical power input	Pmax	5	mW
Forward current	IF	10	mA
Operating ambient temperature	Top	-40 to +85	°C
Storage tempareture	Tstg	-40 to +85	°C

(VR=5V, Tc=25°C unless otherwise noted)

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Dark Current	Id	-	-	10	200	pA
Capacitance	C	f=1MHz	-	0.17	0.35	pF
Responsivity	R	λ=1310nm	0.8	0.88	-	A/W
Responsivity	R	λ=1550nm	0.85	0.98	-	A/W
Band Width	BW	λ=1550nm, Pin=-10dBm	10	14	-	GHz

Specifications are subject to change without notice.

Dark Current	Chip Capacitance

Frequency Response	Frequency Response with sub carrier

Dimension (unit:mm)