Large Area PD
KPDE150/300/10A
KYOSEMI photodiode is made of high quality InGaAs epitaxial wafer. This advantage enables us to make large detection area photodiode which can be used for:
- laser power monitor
- LD/LED aging equipment
- near IR sensing system, etc
Custom designed large area photodiode is also available.
Absolute Maximum Ratings
| Item |
Symbol |
Value |
Unit |
| Reverse voltage |
VR |
2 |
V |
| Reverse current |
IR |
2 |
mA |
| Forward current |
IF |
2 |
mA |
| Operating temperature |
Ta |
-20 to +70 |
°C |
| Storage temperature |
TSTG |
-20 to +80 |
°C |
Characteristics (VR = 1V, Ta = 25°C)
| Parameter |
Symbol |
Value |
Unit |
Condition |
| KPDE150 |
KPDE300 |
KPDE10A |
| Active area |
A |
φ1.5 |
φ3 |
9.5x7 |
mm |
|
| Responsivity |
R |
0.8 MIN |
A/W |
λ = 1310nm |
| R |
0.9 MIN |
A/W |
λ = 1550nm |
| Dark current |
ID |
1 |
1 |
100 |
μA |
|
| Capacitance |
Ct |
0.15 |
1 |
100 |
nF |
f = 1MHz |
Packaging(Custom design can be consulted)
