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Quick FAQ for Kyosemi Corporation

Optical Communication Components

High Speed GaAs Photodiode

KPDG008

Features

  • Low capacitance and high speed with a PIN structure
  • Low dark current
  • High reliability
  • Pigtail type is available as an option

Applications

  • Digital and analog optical VSR communication
  • Optical LAN
  • OE converters

Description

Reliable planar GaAs photodiodes are packaged in hermetically sealed cans with a flat glass window or a ball lens. KPDG008 has the sensitive area of 80μm dia. Which allows to couple with a multi mode fiber efficiently through the ball lens cap. A pigtail type is available as an option for both devices.

Specifications

Absolute Maximum Ratings

Item Value Unit
Storage temperature -40 to +85 °C
Operating temperature -40 to +85 °C
Optical power input 10 mW
Power supply 20 V

Characteristics (VR = 5V, Ta = 25°C unless otherwise noted)

Parameter Symbol Min. Typ. Max. Unit Test Conditions
Active diameter D   80   μm
Bandwidth B 3.5 4.0   GHz Pin = -10dBm, small signal modulation
Responsivity R 0.5 0.55   A/W λ = 850nm
Dark current ID   30 160 pA
Chip capacitance Cchip   0.4 0.5 pF f = 1MHz
Total capacitance C 3.5 4.0   pF f = 1MHz
 


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