Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar

Optical Communication

	InGaAs Photodiodes

	Flip-Chip type InGaAs Photodiode (Back surface illuminated type)

	Edge Illuminated type InGaAs Photodiode

	InGaAs ROSA with FPC(Flexible Printed Circuit)

	InGaAs PD-TIA Receivers

	Silicon PD-TIA Receiver

	GaAs PD & PD-TIAs

	Si PIN Photodiodes

	Mini Can Si-PD

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	Mini CanVCSEL

	Packages

	InGaAs Linear Array

Optical Sensing and Control

LEDs

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Plastic Mold LEDs

Si PD

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Si PTr

Si APD

GaN/InGaN/AlGaN UV Sensor

InGaAs Photodiode with Peltier cooler

Spherical Micro Solar Cell


	Sphelar® Array F12

	Sphelar® One

	Sphelar® Dome

	SphelarVoice®

Edge Illuminated InGaAs Photodiode

KPEI2GC

Features

Edge illuminated type for surface hybrid integration
Low dark current
High reliability

Description

KPEI2GC has a detecting area on edge facet of the photodiode. This is attractive for surface hybrid integration by using V-grooved silicon or planar light-wave circuit (PLC) platform.

Applications

FTTH digital optical communication
Monitor of Laser power output
Optical interconnection

Specifications

Maximum Ratings

Item	Symbol	Value	Unit
Reverse voltage	VR	20	V
Maximum optical power input	Pmax	10	mW
Forward current	IF	10	mA
Operating ambient temperature	Top	-40 to +85	°C
Storage temperature	Tstg	-40 to +85	°C

Electrical Optical Characteristics

(VR = 5V, Tc=25ºC unless othewise noted)

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Dark Current	Id	-	-	20	200	pA
Capacitance	C	f = 1MHz	-	0.45	0.60	pF
Responsivity	R	λ = 1310nm, Pin = -10dBm	0.60	0.70	-	A/W
Responsivity	R	λ = 1550nm, Pin = -10dBm	0.70	0.80	-	A/W
Band Width	BW	λ = 1550nm, Pin = -10dBm	1.0	2.5	-	GHz

Die Geometry

Parameter	Specification	Accuracy	Unit	Note
Chip Size	X: 350, Z: 350	±25	μm
Chip Thickness	Y: 150	±20	μm
Detectable Area	X: 75, Y: 35	±10	μm	@ -1dB down

Specifications are subject to change without notice.

Dark Current

Chip Capacitance

Responsivity Distribution

Frequency Response

Aging Test Result

n=25pcs