Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar

	InGaAs Photodiodes

	Flip-Chip type InGaAs Photodiode (Back surface illuminated type)

	Edge Illuminated type InGaAs Photodiode

	InGaAs ROSA with FPC(Flexible Printed Circuit)

	InGaAs PD-TIA Receivers

	Silicon PD-TIA Receiver

	GaAs PD & PD-TIAs

	Si PIN Photodiodes

	Mini Can Si-PD

	Laser diodes

	VCSEL TOSA

	Mini CanVCSEL

	Packages

	InGaAs Linear Array

Plastic Mold LEDs

Si PD

	Si Photodiodes for General Uses

	Si PIN Photodiodes

	Si UV sensor

	Si High Speed Photodiodes

	Si photodiode array

Si PTr

Si APD

GaN/InGaN/AlGaN UV Sensor

InGaAs Photodiode with Peltier cooler

EIPD (Edge Illuminated InGaAs PD)

KPEIMC - 80, 100

(Ta=25°C unless otherwise noted))

Item	Symbol	Value	Unit
Reverse voltage	VR	20	V
Maximum optical power input	Pmax	10	mW
Forward current	IF	10	mA
Operating ambient temperature	Topr	-40 to +85	°C
Storage temperature	Tstg	-50 to +125	°C

(VR=-5V, Ta=25°C unless otherwise noted)

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Dark Current	lD	-	35	300	pA
Total apacitance	C		0.7 (0.6)	0.9 (0.8)	pF	f=1MHz
Responsivity	R	0.6	0.7	-	A/W	λ = 1310nm, Pin=-10dBm
Responsivity	R	0.7	0.8	-	A/W	λ = 1550nm, Pin=-10dBm
Bandwidth	BW	1.5 (0.8)	2.0 (1.5)	-	GHz	λ = 1550nm, Pin=-10dBm