Kyosemi, ir led, uv led, apd, pd, vecsel, sphelar

	InGaAs Photodiodes

	Flip-Chip type InGaAs Photodiode (Back surface illuminated type)

	Edge Illuminated type InGaAs Photodiode

	InGaAs ROSA with FPC(Flexible Printed Circuit)

	InGaAs PD-TIA Receivers

	Silicon PD-TIA Receiver

	GaAs PD & PD-TIAs

	Si PIN Photodiodes

	Mini Can Si-PD

	Laser diodes

	VCSEL TOSA

	Mini CanVCSEL

	Packages

	InGaAs Linear Array

Plastic Mold LEDs

Si PD

	Si Photodiodes for General Uses

	Si PIN Photodiodes

	Si UV sensor

	Si High Speed Photodiodes

	Si photodiode array

Si PTr

Si APD

GaN/InGaN/AlGaN UV Sensor

InGaAs Photodiode with Peltier cooler

622Mbps PD-TIA (for Si PD)

KPIX600MB-H33

Model No.		Min.	Typ.	Max.	Unit
PD Active area diameter		-	φ200	-	um
Bit Rate		-	622	-	Mbps
Operating Voltage		3.0	3.3/5	5.5	V
Optical Sensitivity (Single, BER=10^-10)		-	-23	-	dBm
Bandwidth @ -3dB (RL=50 ohm ,Pin=-10dBm)		-	480	-	MHz
Supply Current	Vcc=3.3V	14	23	36	mA
Supply Current	Vcc=5V	15	24	32	mA
Output Impedance (Single Ended)		35	50	65	Ω
Differential Output Voltage (Single Ended)		-	-	1.2	Vpp
Photo-Electric Conversion Efficiency (Single Ended)		7.5	-	18.5	kV/W

Specifications are subject to change without notice.