KP-2 双波长光电二极管KPMC29

In order to extend the wavelength range, Si photodiode which has sensitivity to short-wavelength and InGaAs photodiode which has sensitivity to long-wavelength are stacked on the same axis. Also, to make the device more compact, we store InGaAs photodiode to the recess of Si photodiode's substrate. As a result, the height of the package could be as low as possible. (Patents have been filed.) Compared to our earlier models, the volume ratio has been reduced to 1/8.

概要
  • 广范围检测波长(λ=400~1700nm)
  • 可以在同一光轴下进行光学设计
  • 小型且低轮廓的转注成型封装, 可承受回流焊
特点
  • Integrated Si and InGaAs photodiode
  • Same optical axis configuration
  • Wide sensitive wavelength range
  • Low dark current
应用
  • 光谱仪
  • 辐射温度计
  • 医疗设备
  • 光纤测试设备

主要规格

光接收尺寸 [mm]
Si □2.2 x 2.2
InGaAs □0.86 x 0.86
检测波长 Min.[nm] Max.[nm]
400
900
1000
1700
带宽 Typ. 条件
- -
短路电流 Typ.[µA] 条件
- -
响应率 Typ.[A/W] 条件
0.7
0.9
λ=950nm VR=0V
λ=1550nm VR=0V
封装
SMD
光接收尺寸
[mm]
Si □2.2 x 2.2
InGaAs □0.86 x 0.86
检测波长
Min.[nm] Max.[nm]
400
900
1000
1700
带宽
Typ. 条件
- -
短路电流
Typ.[µA] 条件
- -
光接收尺寸
Typ.[A/W] 条件
0.7
0.9
λ=950nm VR=0V
λ=1550nm VR=0V
封装
SMD