In order to extend the wavelength range, Si photodiode which has sensitivity to short-wavelength and InGaAs photodiode which has sensitivity to long-wavelength are stacked on the same axis. Also, to make the device more compact, we store InGaAs photodiode to the recess of Si photodiode's substrate. As a result, the height of the package could be as low as possible(China Patented : No. ZL 2019 8 0018416.7) Compared to our earlier models, the volume ratio has been reduced to 1/8.
概要
- 广范围检测波长（λ=400～1700nm）
- 可以在同一光轴下进行光学设计
- 小型且低轮廓的转注成型封装, 可承受回流焊
特点
- Integrated Si and InGaAs photodiode
- Same optical axis configuration
- Wide sensitive wavelength range
- Low dark current
应用
- 光谱仪
- 辐射温度计
- 医疗设备
- 光纤测试设备
