Products & Technology

5G and Beyond: KP-H high-speed photodiode with lens-integrated

KP-H KPDEH12L-CC1C with 400Gbps transmission speed will begin mass production in November, 2020

TOKYO–(BUSINESS WIRE)– Kyoto Semiconductor Co., Ltd. (headquartered in Kyoto, Japan) has developed a high-speed photodiode KP-H KPDEH12L-CC1C to support 400Gbps transmission systems that use PAM4 (Pulse Amplitude Modulation 4) inside and between data centers. With the introduction of this InGaAs photodiode, the company is continually supporting the increasing speeds and capacity requirements for transmission systems in 5G networks and beyond. Mass production will start in November, 2020.

New product announcement