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Avalanche Photodiodes
KP-A Si Avalanche Photodiodes
KP-A Si Avalanche Photodiodes
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Model No
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Product name
Sensitive size
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Responsivity
Package
Typ.[µm]
Min.[nm]
Max.[nm]
Typ.[GHz]
Conditions
Typ.[A/W]
Conditions
KPM100
KP-A Si Avalanche Photodiodes
φ1000
400
1000
0.1
M=10~100
0.45
M=1 λ=850nm
MODULE
KPDA100P-H8
KP-A Si Avalanche Photodiodes
φ1000
400
1000
0.6
M=100 R
L
=50Ω λ=850nm
0.45
M=1 λ=850nm
TO-CAN
KPDA050P-H8
KP-A Si Avalanche Photodiodes
φ500
400
1000
1.2
M=100 R
L
=50Ω λ=850nm
0.45
M=1 λ=850nm
TO-CAN
KPDA020P-H8
KP-A Si Avalanche Photodiodes
φ200
400
1000
1.3
M=100 R
L
=50Ω λ=850nm
0.45
M=1 λ=850nm
TO-CAN
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