KP-A Si Avalanche Photodiodes

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Select	Model No	Option	Datasheet	Product name	Sensitive size	Sensitive wavelength		Cutoff frequency		Responsivity		Package
Select	Model No	Option	Datasheet	Product name	Typ.[µm]	Min.[nm]	Max.[nm]	Typ.[GHz]	Conditions	Typ.[A/W]	Conditions	Package


KPM100	KP-A Si Avalanche Photodiodes	φ1000	400	1000	0.1	M=10～100	0.45	M=1 λ=850nm	MODULE
KPDA100P-H8	KP-A Si Avalanche Photodiodes	φ1000	400	1000	0.6	M=100 R_L=50Ω λ=850nm	0.45	M=1 λ=850nm	TO-CAN
KPDA050P-H8	KP-A Si Avalanche Photodiodes	φ500	400	1000	1.2	M=100 R_L=50Ω λ=850nm	0.45	M=1 λ=850nm	TO-CAN
KPDA020P-H8	KP-A Si Avalanche Photodiodes	φ200	400	1000	1.3	M=100 R_L=50Ω λ=850nm	0.45	M=1 λ=850nm	TO-CAN