InGaAs PhotodiodesKPA8-2N

Characteristics
  • Large active area convenient for optical coupling
  • Low dark current
  • Respond to 1310nm, C-Band and L-Band
  • High reliability
Applications
  • Laser diode and LED power monitors
  • Near infrared sensors
  • Power meters
  • Optical measurement and sensing

Main Specifications

Sensitive size [mm]
φ0.08
Sensitive wavelength Min.[nm] Max.[nm]
900 1700
Bandwidth Typ. Conditions
2.0GHz Pi=-10dBm VR=5V
Small signal modulation
Short circuit current Typ.[µA] Conditions
- -
Responsivity Typ.[A/W] Conditions
0.80
0.85
λ=1310nm VR=5V
λ=1550nm VR=5V
Package
CHIP
Sensitive size
[mm]
φ0.08
Sensitive wavelength
Min.[nm] Max.[nm]
900 1700
Bandwidth
Typ. Conditions
2.0GHz Pi=-10dBm VR=5V
Small signal modulation
Short circuit current
Typ.[µA] Conditions
- -
Sensitive size
Typ.[A/W] Conditions
0.80
0.85
λ=1310nm VR=5V
λ=1550nm VR=5V
Package
CHIP