InGaAs PhotodiodesKPDB086S-H8

Characteristics
  • 0.86mm sq. large sensitive area
  • Low dark current
  • Low voltage operation
Applications
  • Near infrared sensors
  • Laser diode and LED power monitors
  • Near infrared spectroscopy
  • Power meters
Optional Extras Package

Main Specifications

Sensitive size [mm]
□0.86x0.86
Sensitive wavelength Min.[nm] Max.[nm]
800 1700
Bandwidth Typ. Conditions
50MHz RL=50Ω
VR=2V
Short circuit current Typ.[µA] Conditions
- -
Responsivity Typ.[A/W] Conditions
0.45
1.1
λ=850nm VR=0V
λ=1550nm VR=5V
Package
TO-CAN
Sensitive size
[mm]
□0.86x0.86
Sensitive wavelength
Min.[nm] Max.[nm]
800 1700
Bandwidth
Typ. Conditions
50MHz RL=50Ω
VR=2V
Short circuit current
Typ.[µA] Conditions
- -
Sensitive size
Typ.[A/W] Conditions
0.45
1.1
λ=850nm VR=0V
λ=1550nm VR=5V
Package
TO-CAN