Characteristics
- 0.86mm sq. large sensitive area
- Low dark current
- Low voltage operation
Applications
- Near infrared sensors
- Laser diode and LED power monitors
- Near infrared spectroscopy
- Power meters
Optional Extras Package
InGaAs PhotodiodesKPDB086S-H8
Main Specifications
| Sensitive size | [mm] | |
|---|---|---|
| □0.86x0.86 | ||
| Sensitive wavelength | Min.[nm] | Max.[nm] |
| 800 | 1700 | |
| Bandwidth | Typ. | Conditions |
| 50MHz | RL=50Ω VR=2V |
|
| Short circuit current | Typ.[µA] | Conditions |
| - | - | |
| Responsivity | Typ.[A/W] | Conditions |
| 0.45 1.1 |
λ=850nm VR=0V λ=1550nm VR=5V |
|
| Package | ||
| TO-CAN | ||
| Sensitive size | |
|---|---|
| [mm] | |
| □0.86x0.86 | |
| Sensitive wavelength | |
| Min.[nm] | Max.[nm] |
| 800 | 1700 |
| Bandwidth | |
| Typ. | Conditions |
| 50MHz | RL=50Ω VR=2V |
| Short circuit current | |
| Typ.[µA] | Conditions |
| - | - |
| Sensitive size | |
| Typ.[A/W] | Conditions |
| 0.45 1.1 |
λ=850nm VR=0V λ=1550nm VR=5V |
| Package | |
| TO-CAN | |