Characteristics
- Small size for high density packaging
- Low capacitance and high speed with a PIN structure
- Low dark current
- High reliability
Applications
- Light monitoring
KP-M InGaAs Photodiodes for MonitoringKPDE008S-A
Main Specifications
| Sensitive size | [mm] | |
|---|---|---|
| φ0.08 | ||
| Sensitive wavelength | Min.[nm] | Max.[nm] |
| 900 | 1700 | |
| Bandwidth | Typ. | Conditions |
| 2.0GHz | RL=50Ω Pi=-10dBm VR=5V | |
| Short circuit current | Typ.[µA] | Conditions |
| - | - | |
| Responsivity | Typ.[A/W] | Conditions |
| 0.8 0.9 |
λ=1310nm VR=5V λ=1550nm VR=5V |
|
| Package | ||
| TO-CAN | ||
| Sensitive size | |
|---|---|
| [mm] | |
| φ0.08 | |
| Sensitive wavelength | |
| Min.[nm] | Max.[nm] |
| 900 | 1700 |
| Bandwidth | |
| Typ. | Conditions |
| 2.0GHz | RL=50Ω Pi=-10dBm VR=5V |
| Short circuit current | |
| Typ.[µA] | Conditions |
| - | - |
| Sensitive size | |
| Typ.[A/W] | Conditions |
| 0.8 0.9 |
λ=1310nm VR=5V λ=1550nm VR=5V |
| Package | |
| TO-CAN | |