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  6. KP-M InGaAs Photodiodes for Monitoring KPDE020-S

KP-M InGaAs Photodiodes for MonitoringKPDE020-S

Characteristics
  • Isolated pins from can (body)
  • Small size for high density packaging
  • Low capacitance and high speed with a PIN structure
  • Low dark current
  • High reliability
  • Pigtail type available as an option
  • Window cap type available (-SW)
Applications
  • Digital and analog optical communications
  • Optical LAN
  • OTDR

Datasheet

Example of a General-Purpose Analog Sensor CircuitRequired

KPDE020-S
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Main Specifications

Sensitive size [mm]
Φ0.2
Sensitive wavelength Min.[nm] Max.[nm]
900 1700
Bandwidth Typ. Conditions
1.0GHz RL=50Ω Pi=-10dBm VR=5V
Short circuit current Typ.[µA] Conditions
- -
Responsivity Typ.[A/W] Conditions
0.8
0.9		 λ=1310nm VR=5V
λ=1550nm VR=5V
Package
TO-CAN
Sensitive size
[mm]
Φ0.2
Sensitive wavelength
Min.[nm] Max.[nm]
900 1700
Bandwidth
Typ. Conditions
1.0GHz RL=50Ω Pi=-10dBm VR=5V
Short circuit current
Typ.[µA] Conditions
- -
Sensitive size
Typ.[A/W] Conditions
0.8
0.9		 λ=1310nm VR=5V
λ=1550nm VR=5V
Package
TO-CAN

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