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  6. KP-M InGaAs Photodiodes for Monitoring KPDE030-H8

KP-M InGaAs Photodiodes for MonitoringKPDE030-H8

Characteristics
  • Large active area convenient for optical coupling
  • Low dark current
  • Respond to 1310,C-band and L-Band
  • High reliability
Applications
  • Near infrared sensors
  • Laser diode and LED power monitors
  • Near Infrared spectroscopy
  • Optical measurement and sensing
Optional Extras Package
Optional Extras for PD Packages

Datasheet

Example of a General-Purpose Analog Sensor CircuitRequired

KPDE030-H8
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Main Specifications

Sensitive size [mm]
φ0.3
Sensitive wavelength Min.[nm] Max.[nm]
900 1700
Bandwidth Typ. Conditions
600MHz Pi=-10dBm VR=5V
Small signal modulation
Short circuit current Typ.[µA] Conditions
- -
Responsivity Typ.[A/W] Conditions
0.9
1.0		 λ=1310nm VR=5V
λ=1550nm VR=5V
Package
TO-CAN
Sensitive size
[mm]
φ0.3
Sensitive wavelength
Min.[nm] Max.[nm]
900 1700
Bandwidth
Typ. Conditions
600MHz Pi=-10dBm VR=5V
Small signal modulation
Short circuit current
Typ.[µA] Conditions
- -
Sensitive size
Typ.[A/W] Conditions
0.9
1.0		 λ=1310nm VR=5V
λ=1550nm VR=5V
Package
TO-CAN

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