GaAs PhotodiodesKPDG020C

Characteristics
  • Large detectable area
  • Low dark current
  • High speed
Applications
  • Optical interconnection
Optional Extras Package

Main Specifications

Sensitive size [mm]
φ0.2
Sensitive wavelength Min.[nm] Max.[nm]
650 880
Bandwidth Typ. Conditions
1.0GHz RL=50Ω VR=2V
Short circuit current Typ.[µA] Conditions
- -
Responsivity Typ.[A/W] Conditions
0.6 λ=850nm VR=2V
Package
CHIP
Sensitive size
[mm]
φ0.2
Sensitive wavelength
Min.[nm] Max.[nm]
650 880
Bandwidth
Typ. Conditions
1.0GHz RL=50Ω VR=2V
Short circuit current
Typ.[µA] Conditions
- -
Sensitive size
Typ.[A/W] Conditions
0.6 λ=850nm VR=2V
Package
CHIP