KP-E Edge Illuminated InGaAs PhotodiodesKPEIMC-UDCOM

Characteristics
  • Edge illuminated type for surface hybrid integration
  • Large aperture (100x120µm)
  • Low dark current
  • High reliability
Applications
  • Laser back light power monitors
  • Optical interconnection
  • FTTH digital optical communications

Main Specifications

Sensitive size [mm]
□0.1x0.12
Sensitive wavelength Min.[nm] Max.[nm]
900 1700
Bandwidth Typ. Conditions
1.5GHz Pi=10dBm VR=5V Small signal modulation
Short circuit current Typ.[µA] Conditions
- -
Responsivity Typ.[A/W] Conditions
0.55
0.75
λ=1310nm Pi=10dBm VR=5V
λ=1550nm Pi=10dBm VR=5V
Package
CHIP
Sensitive size
[mm]
□0.1x0.12
Sensitive wavelength
Min.[nm] Max.[nm]
900 1700
Bandwidth
Typ. Conditions
1.5GHz Pi=10dBm VR=5V Small signal modulation
Short circuit current
Typ.[µA] Conditions
- -
Sensitive size
Typ.[A/W] Conditions
0.55
0.75
λ=1310nm Pi=10dBm VR=5V
λ=1550nm Pi=10dBm VR=5V
Package
CHIP