KP-2 Two-tone PhotodiodesKPMC29

In order to extend the wavelength range, Si photodiode which has sensitivity to short-wavelength and InGaAs photodiode which has sensitivity to long-wavelength are stacked on the same axis. Also, to make the device more compact, we store InGaAs photodiode to the recess of Si photodiode's substrate. As a result, the height of the package could be as low as possible. (Patents have been filed.) Compared to our earlier models, the volume ratio has been reduced to 1/8.

Features
  • Wide sensitive wavelength range(λ=400~1700nm)
  • Optical design possible under the same optical axis
  • Small and thin transfer mold package compatible with reflow soldering
Characteristics
  • Integrated Si and InGaAs photodiode
  • Same optical axis configuration
  • Wide sensitive wavelength range
  • Low dark current
Applications
  • Spectrophotometer
  • Radiation thermometer
  • Medical equipment
  • Health care equipment
  • Fiber optic testing equipment

Main Specifications

Sensitive size [mm]
Si □2.2 x 2.2
InGaAs □0.86 x 0.86
Sensitive wavelength Min.[nm] Max.[nm]
400
900
1000
1700
Bandwidth Typ. Conditions
- -
Short circuit current Typ.[µA] Conditions
- -
Responsivity Typ.[A/W] Conditions
0.7
0.9
λ=950nm VR=0V
λ=1550nm VR=0V
Package
SMD
Sensitive size
[mm]
Si □2.2 x 2.2
InGaAs □0.86 x 0.86
Sensitive wavelength
Min.[nm] Max.[nm]
400
900
1000
1700
Bandwidth
Typ. Conditions
- -
Short circuit current
Typ.[µA] Conditions
- -
Sensitive size
Typ.[A/W] Conditions
0.7
0.9
λ=950nm VR=0V
λ=1550nm VR=0V
Package
SMD