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KPID050M

KPID050M
Download datasheet

Features

  • 2GHz response with 200µm active diameter
  • 0.4GHz response with 500µm active diameter
  • Low dark current
  • Low voltage operation
  • Various package options

Applications

  • Short wavelength optical communication
  • Optical measurement
  • Optical sensors

Specifications

Absolute Maximum Ratings
ParameterSymbolValueUnitConditions
Reverse voltageVR50V
Reverse CurrentIR10mA
Forward currentIF1mA
Operating temperatureTopr-40 to +85Avoid dew condensation
Storage temperatureTstg-40 to +85Avoid dew condensation
Soldering temperatureTsol260Soldering time less than 5 seconds
Electrical and Optical characteristics
ParameterSymbolValueUnitConditions
Min.Typ.Max
Sensitive sizeD500µm
Sensitive wavelengthλ4001000nm
ResponsivityR0.35A/WVR=3V, λ=850nm
Dark currentID40160pAVR=3V
Total capacitanceCt4.5p5.5pFVR=3V, f=1MHz
Cutoff frequencyfc0.4GHzRL=50Ω, VR=3V
KPID050M

High Speed Silicon Photodiodes : other products

 Model No.Sensitive size
(µm dia.)
Peak Sensitive Wavelength
(nm), Typ.
ResposivityHalf Angle
(deg)
PackageApplications
(A/W)@λ(nm)
KPID020D2000.35850TO-18, hermetically sealedfc=2GHz optical communication
KPID050M5000.35850fc=0.4GHz optical communication